IRF7854PbF HEXFET Power MOSFET Applications Primary Side Switch in Bridge or two- V R max I DSS DS(on) D switch forward topologies using 48V 13.4m VGS = 10V 80V 10A (10%) or 36V to 60V ETSI range inputs. Secondary Side Synchronous Rectification Switch for 12Vout A Suitable for 48V Non-Isolated A 1 8 S D Synchronous Buck DC-DC Applications 2 7 S D 3 6 Benefits S D Low Gate to Drain Charge to Reduce 4 5 G D Switching Losses SO-8 Top View Fully Characterized Capacitance Including Effective C to Simplify Design, OSS (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 80 V V Gate-to-Source Voltage 20 GS I T = 25C 10 A Continuous Drain Current, V 10V D A GS I T = 70C Continuous Drain Current, V 10V 7.9 D A GS I 79 Pulsed Drain Current DM P T = 25C 2.5 W Maximum Power Dissipation D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 11 V/ns T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient (PCB Mount) R JA 50 Notes through are on page 8 www.irf.com 1 01/05/06IRF7854PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.095 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 11 13.4 V = 10V, I = 10A m GS D V GS(th) Gate Threshold Voltage 3.0 4.9 V V = V , I = 100A DS GS D I Drain-to-Source Leakage Current 20 A V = 80V, V = 0V DSS DS GS 250 V = 80V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 12 S V = 25V, I = 6.0A DS D Q Total Gate Charge 27 41 I = 6.0A g D Q Gate-to-Source Charge 7.7 nC V = 40V gs DS Q Gate-to-Drain Mille) Charge 8.7 V = 10V gd GS t d(on) Turn-On Delay Time 9.4 V = 40V DD t r Rise Time 8.5 I = 6.0A D t d(off) Turn-Off Delay Time 15 ns R = 6.2 G t Fall Time 8.6 V = 10V f GS C Input Capacitance 1620 V = 0V iss GS C Output Capacitance 350 V = 25V oss DS C Reverse Transfer Capacitance 86 pF = 1.0MHz rss C Output Capacitance 1730 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 230 V = 0V, V = 64V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 410 V = 0V, V = 0V to 64V GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 110 mJ Avalanche Current I 6.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 2.3 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 79 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 6.0A, V = 0V SD J S GS t Reverse Recovery Time 43 65 ns T = 25C, I = 6.0A, V = 25V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 76 110 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com