IRF7855PbF HEXFET Power MOSFET Applications Primary Side Switch in Bridge Topology V R max I DSS DS(on) D in Isolated DC-DC Converters 9.4m VGS = 10V 60V 12A Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters Secondary Side Synchronous A Rectification Switch for 15Vout A 1 8 S D Suitable for 48V Non-Isolated 2 7 S D Synchronous Buck DC-DC Applications 3 6 S D 4 5 G D Benefits Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 12 A D A GS I T = 70C 10V 8.7 Continuous Drain Current, V D A GS I 97 Pulsed Drain Current DM P T = 25C 2.5 W D A Maximum Power Dissipation Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 9.9 V/ns T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 20 C/W Junction-to-Ambient (PCB Mount) R 50 JA Notes through are on page 8 www.irf.com 1 05/17/06IRF7855PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 72 mV/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 7.4 9.4 V = 10V, I = 12A m GS D V Gate Threshold Voltage 3.0 4.9 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 14 S V = 25V, I = 7.2A DS D Q Total Gate Charge 26 39 I = 7.2A g D Q Gate-to-Source Charge 6.8 nC V = 30V gs DS Q gd Gate-to-Drain Mille) Charge 9.6 V = 10V GS t d(on) Turn-On Delay Time 8.7 V = 30V DD t r Rise Time 13 I = 7.2A D t Turn-Off Delay Time 16 ns R = 6.2 d(off) G t Fall Time 12 V = 10V f GS C Input Capacitance 1560 V = 0V iss GS C Output Capacitance 440 V = 25V oss DS C Reverse Transfer Capacitance 120 pF = 1.0MHz rss C oss Output Capacitance 1910 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 320 V = 0V, V = 48V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 520 V = 0V, V = 0V to 48V GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 540 mJ AS Avalanche Current I 7.2 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 2.3 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 97 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 7.2A, V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C, I = 7.2A, V = 25V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 38 57 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com