IRF7907PbF HEXFET Power MOSFET Applications V I R max Dual SO-8 MOSFET for POL DSS DS(on) D Converters in Notebook Computers, Servers, 30V Q1 16.4m V = 10V 9.1A GS Graphics Cards, Game Consoles and Set-Top Box Q2 11.8m V = 10V 11A GS Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS Improved Body Diode Reverse Recovery SO-8 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 9.1 11 D A GS I T = 70C Continuous Drain Current, V 10V 7.3 8.8 A D A GS Pulsed Drain Current I 76 85 DM P T = 25C Power Dissipation 2.0 2.0 W D A P T = 70C Power Dissipation 1.3 1.3 D A Linear Derating Factor 0.016 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 42 42 C/W JL R 62.5 62.5 JA Junction-to-Ambient www.irf.com 1 07/09/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V V = 0V, I = 250A GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient Q1 0.024 V/C D DSS J Q2 0.024 V = 10V, I = 9.1A Q1 13.7 16.4 GS D R Static Drain-to-Source On-Resistance 17.1 20.5 m V = 4.5V, I = 7.3A GS D DS(on) V = 10V, I = 11A Q2 9.8 11.8 GS D V = 4.5V, I = 8.8A 11.5 13.7 GS D Q1: V = V , I = 25A V Gate Threshold Voltage Q1&Q2 1.35 1.8 2.35 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient Q1 -4.6 mV/C Q2: V = V , I = 50A DS GS D GS(th) J Q2 -4.9 V = 24V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J I Gate-to-Source Forward Leakage Q1&Q2 100 nA V = 20V GS GSS Gate-to-Source Reverse Leakage Q1&Q2 -100 V = -20V GS V = 15V, I = 7.0A gfs Forward Transconductance Q1 19 S DS D V = 15V, I = 8.8A Q2 24 DS D Q Total Gate Charge Q1 6.7 10 g Q2 14 21 Q Pre-Vth Gate-to-Source Charge Q1 1.3 Q1 gs1 Q2 3.0 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.7 nC V = 4.5V, I = 7.0A gs2 GS D Q2 1.3 Q Gate-to-Drain Charge Q1 2.5 Q2 gd Q2 4.9 V = 15V DS Q Gate Charge Overdrive Q1 2.2 V = 4.5V, I = 8.8A godr GS D Q2 4.8 Q Switch Charge (Q + Q ) Q1 3.2 sw gs2 gd Q2 6.2 V = 16V, V = 0V Q Output Charge Q1 4.5 nC DS GS oss Q2 9.0 R Q1 4.7 Gate Resistance 2.6 G Q2 3.0 5.0 t Turn-On Delay Time Q1 6.0 Q1 d(on) V = 15V, V = 4.5V Q2 8.0 DD GS t Rise Time Q1 9.3 I = 7.0A r D Q2 14 ns t Turn-Off Delay Time Q1 8.0 Q2 d(off) V = 15V, V = 4.5V Q2 13 DD GS t Fall Time Q1 3.4 I = 8.8A f D Q2 5.3 Clamped Inductive Load C Input Capacitance Q1 850 iss V = 0V Q2 1790 GS C Output Capacitance Q1 190 pF V = 15V DS oss Q2 390 = 1.0MHz C Reverse Transfer Capacitance Q1 88 rss Q2 190 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 10 15 mJ AS I Avalanche Current 7.0 8.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 2.8 A MOSFET symbol S (Body Diode) Q2 2.8 showing the I Pulsed Source Current Q1 76 A integral reverse SM (Body Diode) Q2 85 p-n junction diode. T = 25C, I = 7.3A, V = 0V V Diode Forward Voltage Q1 1.0 V J S GS SD T = 25C, I = 8.8A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 7.0A, t Reverse Recovery Time Q1 12 18 ns J F rr Q2 16 24 V = 15V, di/dt = 100A/s DD Q Reverse Recovery Charge Q1 4.1 6.1 nC Q2 T = 25C, I = 8.8A, J F rr V = 15V, di/dt = 100A/s Q2 5.9 8.9 DD 2 www.irf.com