StrongIRFET IRF7946PbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications V 40V DSS BLDC Motor drive applications R typ. 1.1m Battery powered circuits DS(on) Half-bridge and full-bridge topologies max 1.4m Synchronous rectifier applications Resonant mode power supplies I 198A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G S DD S Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA MX DirectFET ISOMETRIC Enhanced body diode dv/dt and di/dt Capability RoHS Compliant Containing no Lead, no Bromide and no Halogen Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF7946TRPbF DirectFET MX Tape and Reel 4800 IRF7946TRPbF 6.0 200 I = 90A D 150 4.0 100 T = 125C J 2.0 50 T = 25C J 0.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 V Gate -to -Source Voltage (V) T , Case Temperature (C) GS, C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 9, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRF7946PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 198 D C GS I T = 100C Continuous Drain Current, V 10V 125 A D C GS I Pulsed Drain Current 793 DM P T = 25C Maximum Power Dissipation 96 W D C Linear Derating Factor 0.77 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 150 J C Storage Temperature Range T STG Avalanche Characteristics E Single Pulse Avalanche Energy 85 AS (Thermally limited) mJ E Single Pulse Avalanche Energy 200 AS (Thermally limited) I Avalanche Current A AR See Fig.15,16, 22a, 22b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 45 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.3 JC R Junction-to-PCB Mounted 1.0 JA-PCB Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 1.0mA D (BR)DSS J R Static Drain-to-Source On-Resistance 1.1 1.4 V = 10V, I = 90A DS(on) GS D m 1.7 V = 6.0V, I = 72A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 150A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.67 G Notes: Mounted on minimum footprint full size board with metalized TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted to a PCB with small clip Mounted on minimum footprint full size Surface mounted on 1 in. square Cu heatsink (still air) board with metalized back and with board (still air). small clip heatsink (still air) 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 9, 2015