PD - 94433 HEXFET POWER MOSFET IRF7NJZ44V SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL Product Summary Part Number BV RDS(on) ID DSS IRF7NJZ44V 60V 0.0165 22A* Seventh Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, Dynamic dv/dt Rating provides the designer with an extremely efficient device for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 22* D GS C A I V = 10V, T = 100C Continuous Drain Current 22* D GS C I Pulsed Drain Current 88 DM P T = 25C Max. Power Dissipation 50 W D C Linear Derating Factor 0.4 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 66 mJ AS I Avalanche Current 22 A AR E Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt 2.2 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Package Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g * Current is limited by package and internal wires For footnotes refer to the last page www.irf.com 1 04/24/02IRF7NJZ44V Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A DSS GS D BV / T Temperature Coefficient of Breakdown 0.056 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.0165 V = 10V, I = 22A DS(on) GS D Resistance V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D g Forward Transconductance 24 S ( )V =15V, I = 22A fs DS DS I Zero Gate Voltage Drain Current 25 V = 60V ,V =0V DSS DS GS A 250 V = 48V, DS V = 0V, T =125C GS J I Gate-to-Source Leakage Forward 100 V =-20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 67 V =10V, I = 22A g GS D Q Gate-to-Source Charge 18 nC V = 48V gs DS Q Gate-to-Drain (Miller) Charge 25 gd t Turn-On Delay Time 20 V = 30V, I = 22A, d(on) DD D t Rise Time 120 V = 10V, R = 7.5 r GS G ns t Turn-Off Delay Time 60 d(off) t Fall Time 90 f L + L Total Inductance 4.0 Measured from the center of drain S D nH l pad to the center of source pad C Input Capacitance 1723 V = 0V, V = 25V iss GS DS C Output Capacitance 370 pF f = 1.0MHz oss C Reverse Transfer Capacitance 70 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 22* S A I Pulse Source Current (Body Diode) 88 SM V Diode Forward Voltage 1.5 V T = 25C, I = 22A, V = 0V SD j S GS t Reverse Recovery Time 105 ns T = 25C, I = 22A, di/dt 100A/ s rr j F Q Reverse Recovery Charge 250 nC V 25V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D * Current is limited by package and internal wires Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 2.5 C/W thJC Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com