IRF8113PbF HEXFET Power MOSFET Applications V R max Qg Typ. DSS DS(on) Synchronous MOSFET for Notebook 5.6m V = 10V 30V 24nC Processor Power GS Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D Very Low R at 4.5V V 3 6 DS(on) GS S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 17.2 D A I T = 70C Continuous Drain Current, V 10V GS 13.8 A D A Pulsed Drain Current I 135 DM Power Dissipation P T = 25C 2.5 W D A Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R JA 50 Notes through are on page 10 www.irf.com 1 6/29/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 4.7 5.6 m V = 10V, I = 17.2A DS(on) GS D 5.8 6.8 V = 4.5V, I = 13.8A GS D V Gate Threshold Voltage 1.5 2.2 V V = V , I = 250A GS(th) DS GS D V Gate Threshold Voltage Coefficient - 5.4 mV/C GS(th) Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V I DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 73 S V = 15V, I = 13.3A DS D Q Total Gate Charge 24 36 g Q Pre-Vth Gate-to-Source Charge 6.2 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 2.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 8.5 I = 13.3A gd D Q Gate Charge Overdrive 7.3 See Fig. 16 godr Q Switch Charge (Q + Q ) 10.5 sw gs2 gd Q Output Charge 10 nC V = 10V, V = 0V oss DS GS R Gate Resistance 0.8 1.5 G t Turn-On Delay Time 13 V = 15V, V = 4.5V d(on) DD GS t Rise Time 8.9 I = 13.3A r D t Turn-Off Delay Time 17 ns Clamped Inductive Load d(off) t Fall Time 3.5 f C Input Capacitance 2910 V = 0V iss GS C Output Capacitance 600 pF V = 15V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 48 mJ AS Avalanche Current I 13.3 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 135 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 13.3A, V = 0V J S GS t rr Reverse Recovery Time 34 51 ns T = 25C, I = 13.3A, V = 10V DD J F Q Reverse Recovery Charge 21 32 nC di/dt = 100A/s rr 2 www.irf.com