97145 IRF8313PbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) Load Switch DC/DC Conversion 30V 15.5m V = 10V 6.0nC GS Benefits Low Gate Charge and Low R DS(on) Fully Characterized Avalanche Voltage S2 1 8 D2 and Current 20V V Max. Gate Rating GS G2 2 7 D2 100% Tested for R G S1 3 6 D1 Lead-Free (Qualified to 260C Reflow) G1 4 5 D1 RoHS Compliant (Halogen Free) SO-8 Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 9.7 GS D A Continuous Drain Current, V 10V I T = 70C 8.1 A A GS D Pulsed Drain Current I 81 DM P T = 25C Power Dissipation 2.0 D A W P T = 70C Power Dissipation 1.3 A D Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 42 JL C/W Junction-to-Ambient R 62.5 JA Notes through are on page 9 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/5/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 12.5 15.5 V = 10V, I = 9.7A DS(on) GS D m 18.6 21.6 V = 4.5V, I = 8.0A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.0 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 23 S V = 15V, I = 8.0A DS D Q Total Gate Charge 6.0 9.0 g Q Pre-Vth Gate-to-Source Charge 1.5 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.9 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.2 I = 8.0A gd D Q Gate Charge Overdrive 1.4 See Figs. 17a & 17b godr Q Switch Charge (Q + Q ) 2.9 sw gs2 gd Q Output Charge 3.8 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.2 3.6 g t Turn-On Delay Time 8.3 V = 15V, V = 4.5V d(on) DD GS t Rise Time 9.9 I = 8.0A r D ns R = 1.8 t Turn-Off Delay Time 8.5 G d(off) t Fall Time 4.2 See Fig. 15a & 15b f C Input Capacitance 760 V = 0V iss GS C Output Capacitance 172 pF V = 15V oss DS C Reverse Transfer Capacitance 87 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 46 mJ AS Avalanche Current I 8.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 3.1 A (Body Diode) showing the G I Pulsed Source Current integral reverse SM 82 A S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 8.0A, V = 0V J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 8.0A, V = 15V rr J F DD Q Reverse Recovery Charge 10 15 nC di/dt = 100A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com