DirectFET Power MOSFET RoHS Compliant and Halogen Free Low Profile (<0.7 mm) V V R R DSS GS DS(on) DS(on) Dual Sided Cooling Compatible 30V max 20V max 5.1m 10V 8.5m 4.5V Ultra Low Package Inductance Optimized for High Frequency Switching Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Ideal for CPU Core DC-DC Converters 9.2nC 3.0nC 1.2nC 19nC 7.9nC 1.9V Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SX ST MQ MX MT MP SQ Description The IRF8327SPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8327SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Standard Pack Orderable part number Package Type Note Form Quantity IRF8327STRPbF DirectFET SQ Tape and Reel 4800T suffix IRF8327STR1PbF DirectFET SQ Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 14 D A GS 11 A I T = 70C Continuous Drain Current, V 10V D A GS I T = 25C Continuous Drain Current, V 10V 60 D C GS Pulsed Drain Current 110 I DM E Single Pulse Avalanche Energy 62 mJ AS Avalanche Current 11 A I AR 25 14.0 I = 14A I = 11A D D 12.0 V = 24V DS 20 V = 15V 10.0 DS V = 6.0V 15 DS 8.0 6.0 T = 125C 10 J 4.0 5 2.0 T = 25C J 0 0.0 0 5 10 15 20 0 5 10 15 20 25 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 1.1mH, R = 25, I = 11A. Surface mounted on 1 in. square Cu board, steady state. J G AS Typical R (m) DS(on) V , Gate-to-So urce Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D V /T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J V = 10V, I = 14A R Static Drain-to-Source On-Resistance 5.1 7.3 m GS D DS(on) V = 4.5V, I = 11A 8.5 10.9 GS D V = V , I = 25 A V Gate Threshold Voltage 1.4 1.9 2.4 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.3 mV/C GS(th) J V = 24V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 11A gfs Forward Transconductance 25 S DS D Q Total Gate Charge 9.2 14 g Q V = 15V Pre-Vth Gate-to-Source Charge 2.7 DS gs1 V = 4.5V Q Post-Vth Gate-to-Source Charge 1.2 nC gs2 GS Q I = 11A Gate-to-Drain Charge 3.0 gd D Q Gate Charge Overdrive 2.3 See Fig. 15 godr Q Switch Charge (Q + Q ) 4.2 sw gs2 gd V = 16V, V = 0V Q Output Charge 7.9 nC DS GS oss R Gate Resistance 2.1 3.7 G V = 15V, V = 4.5V t Turn-On Delay Time 7.8 DD GS d(on) I = 11A t Rise Time 8.9 ns r D t Turn-Off Delay Time 9.3 R = 1.8 d(off) G t Fall Time 5.3 See Fig. 17 f C V = 0V Input Capacitance 1430 iss GS V = 15V C Output Capacitance 370 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 140 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 52 MOSFET symbol S (Body Diode) A showing the I integral reverse Pulsed Source Current 110 SM p-n junction diode. (Body Diode) T = 25C, I = 11A, V = 0V V Diode Forward Voltage 0.80 1.0 V SD J S GS t T = 25C, I = 11A Reverse Recovery Time 17 26 ns J F rr Q Reverse Recovery Charge 19 29 nC di/dt = 230A/ s rr Pulse width 400s duty cycle 2%.