IRF8714PbF Applications HEXFET Power MOSFET Control MOSFET of Sync-Buck V R max Qg Converters used for Notebook DSS DS(on) Processor Power 30V 8.7m V = 10V 8.1nC GS Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A 1 8 Very Low Gate Charge S D Very Low R at 4.5V V 2 7 DS(on) GS S D Ultra-Low Gate Impedance 3 6 S D Fully Characterized Avalanche Voltage 4 5 G D and Current SO-8 20V V Max. Gate Rating GS Top View 100% tested for Rg Lead-Free Description The IRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 14 D A Continuous Drain Current, V 10V I T = 70C GS 11 A D A Pulsed Drain Current I 110 DM P T = 25C Power Dissipation 2.5 W D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 08/01/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 7.1 8.7 V = 10V, I = 14A DS(on) m GS D 10.9 13 V = 4.5V, I = 11A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 25A GS(th) DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.0 mV/C V = V , I = 25A DS GS D I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 71 S V = 15V, I = 11A DS D Q Total Gate Charge 8.1 12 g Q Pre-Vth Gate-to-Source Charge 1.9 V = 15V gs1 DS Q gs2 Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V GS Q gd Gate-to-Drain Charge 3.0 I = 11A D Q godr Gate Charge Overdrive 2.2 See Figs. 15 & 16 Q Switch Charge (Q + Q ) sw gs2 gd 4.0 Q oss Output Charge 4.8 nC V = 16V, V = 0V DS GS R g Gate Resistance 1.6 2.6 t d(on) Turn-On Delay Time 10 V = 15V, V = 4.5V DD GS t Rise Time 9.9 I = 11A r D t Turn-Off Delay Time 11 ns d(off) R = 1.8 G t Fall Time 5.0 f See Fig. 18 C iss Input Capacitance 1020 V = 0V GS C oss Output Capacitance 220 pF V = 15V DS C rss Reverse Transfer Capacitance 110 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 65 mJ AS Avalanche Current I 11 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the G I SM Pulsed Source Current 110 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 11A, V = 0V J S GS t rr Reverse Recovery Time 14 21 ns T = 25C, I = 11A, V = 15V DD J F Q di/dt = 300A/s Reverse Recovery Charge 15 23 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com