IRF8721PbF HEXFET Power MOSFET Applications Control MOSFET of Sync-Buck V R max Qg DSS DS(on) Converters used for Notebook Processor 8.5m V = 10V 30V 8.3nC GS Power Control MOSFET for Isolated DC-DC Converters in Networking Systems A A Benefits 1 8 S D Very Low Gate Charge 2 7 S D Low R at 4.5V V DS(on) GS 3 6 S D Low Gate Impedance 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 20V V Max. Gate Rating GS Lead-Free Description The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc- tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 14 A GS D Continuous Drain Current, V 10V I T = 70C 11 A D A GS Pulsed Drain Current I 110 DM P T = 25C Power Dissipation 2.5 W D A P T = 70C Power Dissipation 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 9 www.irf.com 1 07/30/07 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 6.9 8.5 m V = 10V, I = 14A DS(on) GS D 10.6 12.5 V = 4.5V, I = 11A GS D V Gate Threshold Voltage 1.35 2.35 V V = V , I = 25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.2 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 27 S V = 15V, I = 11A DS D Q Total Gate Charge 8.3 12 g Q Pre-Vth Gate-to-Source Charge 2.0 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.2 I = 11A gd D Q Gate Charge Overdrive 2.0 See Fig. 16a and 16b godr Q Switch Charge (Q + Q ) 4.2 sw gs2 gd Q Output Charge 5.0 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.8 G 3.0 t Turn-On Delay Time 8.2 V = 15V, V = 4.5V d(on) DD GS t Rise Time 11 I = 11A r D t Turn-Off Delay Time 8.1 ns R = 1.8 d(off) G t Fall Time 7.0 See Fig. 15a f C Input Capacitance 1040 V = 0V iss GS C Output Capacitance 229 pF V = 15V oss DS C Reverse Transfer Capacitance 114 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 68 mJ AS Avalanche Current I 11 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 112 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 11A, V = 0V SD J S GS t Reverse Recovery Time 14 21 ns T = 25C, I = 11A, V = 15V rr DD J F Q Reverse Recovery Charge 15 23 nC di/dt = 300A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com