IRF8915PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Dual SO-8 MOSFET for POL converters in desktop, servers, 18.3m V = 10V 20V 8.9A GS graphics cards, game consoles and set-top box Lead-Free 1 8 S1 D1 2 7 G1 D1 3 6 S2 D2 Benefits 4 5 G2 D2 Ultra-Low Gate Impedance SO-8 Very Low R DS(on) Top View Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 8.9 A D I T = 70C Continuous Drain Current, V 10V A GS 7.1 A D Pulsed Drain Current I 71 DM P T = 25C Power Dissipation 2.0 W A D P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 42 C/W JL Junction-to-Ambient R JA 62.5 Notes through are on page 10 www.irf.com 1 07/23/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D / V T Breakdown Voltage Temp. Coefficient 0.015 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 14.6 18.3 V = 10V, I = 8.9A DS(on) m GS D 21.6 27 V = 4.5V, I = 7.1A GS D V GS(th) Gate Threshold Voltage 1.7 2.5 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -4.8 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 12 S V = 10V, I = 7.1A DS D Q g Total Gate Charge 4.9 7.4 Q gs1 Pre-Vth Gate-to-Source Charge 1.8 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 0.61 nC V = 4.5V GS Q gd Gate-to-Drain Charge 1.7 I = 7.1A D Q godr Gate Charge Overdrive 0.79 See Fig. 6 Q Switch Charge (Q + Q ) 2.3 sw gs2 gd Q Output Charge 2.7 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 6.0 V = 4.5V, V = 4.5V d(on) DD GS t r Rise Time 12 ns I = 7.1A D t d(off) Turn-Off Delay Time 7.1 Clamped Inductive Load t f Fall Time 3.6 C iss Input Capacitance 540 V = 0V GS C oss Output Capacitance 180 pF V = 10V DS C Reverse Transfer Capacitance 91 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 15 mJ AS Avalanche Current I 7.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 2.5 MOSFET symbol (Body Diode) A showing the G I SM Pulsed Source Current 71 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 7.1A, V = 0V J S GS t Reverse Recovery Time 13 19 ns T = 25C, I = 7.1A, V = 10V rr J F DD s Q Reverse Recovery Charge 3.5 5.2 nC di/dt = 100A/ rr 2 www.irf.com