IRF9328PbF HEXFET Power MOSFET V -30 V DS R DS(on) max 11.9 m ( V = -10V) GS R DS(on) max 19.7 m ( V = -4.5V) GS Q 18 nC g (typical) SO-8 I D -12 A ( T = 25C) A Applications Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9328PbF SO8 Tube/Bulk 95 IRF9328TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage -30 DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V -12 I T = 25C D A GS Continuous Drain Current, V 10V -9.6 A I T = 70C D A GS Pulsed Drain Current -96 I DM P T = 25C Power Dissipation 2.5 D A W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C -55 to + 150 T Operating Junction and J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 5/26/10 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = -250A BV Drain-to-Source Breakdown Voltage -30 V DSS GS D Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -10V, I = -12A R 10 11.9 DS(on) GS D Static Drain-to-Source On-Resistance m V = -4.5V, I = -9.6A 16.1 19.7 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25A DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) I V = -24V, V = 0V Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GSS GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -9.6A gfs Forward Transconductance 20 S DS D Q V = -15V, V = -4.5V, I = - 9.6A Total Gate Charge 18 nC g DS GS D = -10V Q Total Gate Charge 35 52 V g GS V = -15V Q Gate-to-Source Charge 5.3 nC DS gs Q I = -9.6A Gate-to-Drain Charge 8.5 D gd R Gate Resistance 15 G t V = -15V, V = -4.5V Turn-On Delay Time 19 DD GS d(on) t I = -1.0A r Rise Time 57 D ns t Turn-Off Delay Time 80 R = 6.8 d(off) G t See Figs. 20a &20b f Fall Time 66 V = 0V C Input Capacitance 1680 iss GS pF V = -25V C Output Capacitance 350 DS oss C Reverse Transfer Capacitance 220 = 1.0kHz rss Avalanche Characteristics Typ. Max. Parameter Units E 120 AS Single Pulse Avalanche Energy mJ I Avalanche Current -9.6 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.5 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM -96 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t T = 25C, I = -2.5A, V = -24V Reverse Recovery Time 51 76 ns rr J F DD Q di/dt = 100A/ s Reverse Recovery Charge 35 53 nC rr Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W 50 R Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 2.6mH, R = 25, I = -9.6A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com