X-On Electronics has gained recognition as a prominent supplier of IRF9328PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9328PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9328PBF Infineon

IRF9328PBF electronic component of Infineon
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See Product Specifications
Part No.IRF9328PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET P-CH 30V 12A 8-Pin SOIC N Tube
Datasheet: IRF9328PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8306 ea
Line Total: USD 0.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8306
10 : USD 0.7039
100 : USD 0.5395
500 : USD 0.4265
1000 : USD 0.3412

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 190
Multiples : 95
190 : USD 0.3574

   
Manufacturer
Product Category
Packaging
Channel Mode
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Power Dissipation
Mounting
Noise Figure
Drain-Source On-Res
Operating Temp Range
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Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
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Rad Hardened
Continuous Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF9328PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9328PBF and other electronic components in the MOSFETs category and beyond.

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IRF9328PbF HEXFET Power MOSFET V -30 V DS R DS(on) max 11.9 m ( V = -10V) GS R DS(on) max 19.7 m ( V = -4.5V) GS Q 18 nC g (typical) SO-8 I D -12 A ( T = 25C) A Applications Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9328PbF SO8 Tube/Bulk 95 IRF9328TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage -30 DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V -12 I T = 25C D A GS Continuous Drain Current, V 10V -9.6 A I T = 70C D A GS Pulsed Drain Current -96 I DM P T = 25C Power Dissipation 2.5 D A W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C -55 to + 150 T Operating Junction and J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 5/26/10 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = -250A BV Drain-to-Source Breakdown Voltage -30 V DSS GS D Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -10V, I = -12A R 10 11.9 DS(on) GS D Static Drain-to-Source On-Resistance m V = -4.5V, I = -9.6A 16.1 19.7 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25A DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) I V = -24V, V = 0V Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GSS GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -9.6A gfs Forward Transconductance 20 S DS D Q V = -15V, V = -4.5V, I = - 9.6A Total Gate Charge 18 nC g DS GS D = -10V Q Total Gate Charge 35 52 V g GS V = -15V Q Gate-to-Source Charge 5.3 nC DS gs Q I = -9.6A Gate-to-Drain Charge 8.5 D gd R Gate Resistance 15 G t V = -15V, V = -4.5V Turn-On Delay Time 19 DD GS d(on) t I = -1.0A r Rise Time 57 D ns t Turn-Off Delay Time 80 R = 6.8 d(off) G t See Figs. 20a &20b f Fall Time 66 V = 0V C Input Capacitance 1680 iss GS pF V = -25V C Output Capacitance 350 DS oss C Reverse Transfer Capacitance 220 = 1.0kHz rss Avalanche Characteristics Typ. Max. Parameter Units E 120 AS Single Pulse Avalanche Energy mJ I Avalanche Current -9.6 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.5 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM -96 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t T = 25C, I = -2.5A, V = -24V Reverse Recovery Time 51 76 ns rr J F DD Q di/dt = 100A/ s Reverse Recovery Charge 35 53 nC rr Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W 50 R Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 2.6mH, R = 25, I = -9.6A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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