97523 IRF9333PbF HEXFET Power MOSFET V -30 V DS R DS(on) max 19.4 m ( V = -10V) GS R DS(on) max 32.5 m ( V = -4.5V) GS Q 14 nC g (typical) SO-8 I D -9.2 A ( T = 25C) A Applications Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9333PbF SO8 Tube/Bulk 95 IRF9333TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V -30 Drain-to-Source Voltage DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V -9.2 I T = 25C GS A D I T = 70C Continuous Drain Current, V 10V -7.3 A GS D A -75 I Pulsed Drain Current DM 2.5 P T = 25C Power Dissipation A D W Power Dissipation 1.6 P T = 70C D A Linear Derating Factor 0.02 W/C -55 to + 150 T Operating Junction and J C Storage Temperature Range T STG Notes through are on page 2 www.irf.com 1 6/21/10 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = -250A BV Drain-to-Source Breakdown Voltage -30 V DSS GS D Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.019 V/C D DSS J V = -10V, I = -9.2A R 15.6 19.4 DS(on) GS D Static Drain-to-Source On-Resistance m V = -4.5V, I = -7.5A 25.6 32.5 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25A DS GS D V Gate Threshold Voltage Coefficient -5.7 mV/C GS(th) I V = -24V, V = 0V Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -20V Gate-to-Source Forward Leakage -100 GS GSS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -7.5A gfs Forward Transconductance 13 S DS D Q V = -15V, V = -4.5V, I = - 7.5A Total Gate Charge 14 nC g DS GS D V = -10V Q Total Gate Charge 25 38 g GS V = -15V Q Gate-to-Source Charge 3.5 nC DS gs Q Gate-to-Drain Charge 6.4 I = -7.5A gd D R Gate Resistance 15 G t V = -15V, V = -4.5V Turn-On Delay Time 16 DD GS d(on) I = -1.0A t Rise Time 44 r D ns t R = 6.8 Turn-Off Delay Time 55 d(off) G t See Figs. 20a &20b f Fall Time 49 V = 0V C Input Capacitance 1110 iss GS C pF V = -25V Output Capacitance 230 DS oss C Reverse Transfer Capacitance 160 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 100 mJ AS I -7.5 Avalanche Current A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -75 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t T = 25C, I = -2.5A, V = -24V rr Reverse Recovery Time 24 36 ns J F DD Q Reverse Recovery Charge 15 23 nC di/dt = 100A/ s rr Thermal Resistance Typ. Max. Parameter Units 20 R Junction-to-Drain Lead JL C/W R 50 Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 3.5mH, R = 25, I = -7.5A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com