IRF9335PbF HEXFET Power MOSFET V -30 V DS S18 D R DS(on) max 59 m S27 D ( V = -10V) GS S 3 6 D R DS(on) max 110 m ( V = -4.5V) GS G 4 5 D Q 9.1 nC g (typical) SO-8 I D -5.4 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits results in Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9335PbF SO8 Tube/Bulk 95 IRF9335TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage -30 DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V -10V -5.4 GS D A I T = 70C Continuous Drain Current, V -10V -4.3 A GS D A I Pulsed Drain Current -43 DM 2.5 P T = 25C Power Dissipation A D W 1.6 P T = 70C Power Dissipation A D 0.02 Linear Derating Factor W/C -55 to + 150 T Operating Junction and J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 06/17/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250A BV Drain-to-Source Breakdown Voltage -30 V DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.019 V/C Reference to 25C, I = -1mA DSS J D R 48 59 V = -10V, I = -5.4A DS(on) GS D Static Drain-to-Source On-Resistance m V = -4.5V, I = -4.3A 83 110 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -10A DS GS D V Gate Threshold Voltage Coefficient -5.1 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GSS GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -4.3A gfs Forward Transconductance 5.4 S DS D Q V = -15V,V = -4.5V,I = - 4.3A Total Gate Charge 4.7 nC g DS GS D Q V = -10V Total Gate Charge 9.1 14 GS g V = -15V Q Gate-to-Source Charge 1.3 nC DS gs I = -4.3A Q Gate-to-Drain Charge 2.6 gd D R Gate Resistance 10 G V = -15V, V = -4.5V t Turn-On Delay Time 9.7 d(on) DD GS t I = -1.0A r Rise Time 19 D ns t R = 6.8 Turn-Off Delay Time 16 d(off) G t See Figs. 19a & 19b Fall Time 15 f V = 0V C Input Capacitance 386 GS iss V = -25V C Output Capacitance 94 pF oss DS C Reverse Transfer Capacitance 66 = 1.0KHz rss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 98 mJ AS I Avalanche Current -4.3 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol S Continuous Source Current D -2.5 showing the (Body Diode) A G I integral reverse Pulsed Source Current SM -43 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 14 21 ns T = 25C, I = -2.5A, V = -24V rr J F DD Q Reverse Recovery Charge 7.4 11 nC di/dt = 100/s rr Thermal Resistance Typ. Max. Parameter Units 20 R Junction-to-Drain Lead JL C/W R Junction-to-Ambient 50 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 10.6mH, R = 50 , I = -4.3A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com