IRF9358PbF HEXFET Power MOSFET V -30 V DS S2 1 8 D2 D R DS(on) max 16.3 m G2 2 7 D2 ( V = -10V) GS R S1 3 6 D1 DS(on) max D 23.8 m ( V = -4.5V) GS G1 4 5 D1 Q 19 nC g (typical) SO-8 I D -9.2 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V -30 Drain-to-Source Voltage DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V -9.2 I T = 25C GS A D I T = 70C Continuous Drain Current, V 10V -7.3 A GS D A -73 I Pulsed Drain Current DM 2.0 P T = 25C Power Dissipation A D W P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C -55 to + 150 T Operating Junction and J C Storage Temperature Range T STG Notes through are on page 2 www.irf.com 1 1/2/11 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = -250 A Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V /T Breakdown Voltage Temp. Coefficient 0.02 V/C D DSS J V = -10V, I = -9.2A R 13.0 16.3 GS D DS(on) Static Drain-to-Source On-Resistance m V = -4.5V, I = -7.3A 19.0 23.8 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25 A DS GS D V Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DSS DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -20V GSS Gate-to-Source Forward Leakage -100 GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -7.3A gfs Forward Transconductance 23 S DS D Q Total Gate Charge 19 nC V = -15V, V = -4.5V, I = - 7.3A g DS GS D V = -10V Q Total Gate Charge 38 GS g V = -15V Q Gate-to-Source Charge 5.8 nC DS gs I = -7.3A Q Gate-to-Drain Charge 8.9 D gd R Gate Resistance 15 G t Turn-On Delay Time 5.7 V = -15V, V = -4.5V d(on) DD GS t Rise Time 7.2 I = -1.0A r D ns t R = 6.8 d(off) Turn-Off Delay Time 146 G t See Figs. 19a &19b Fall Time 69 f C V = 0V Input Capacitance 1740 GS iss C V = -25V Output Capacitance 360 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 240 rss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current -7.3 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -73 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 55 83 ns T = 25C, I = -2.0A, V = -24V rr DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 35 53 nC Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 62.5 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 4.6mH, R = 25, I = -6.4A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com