X-On Electronics has gained recognition as a prominent supplier of IRF9358PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9358PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9358PBF Infineon

IRF9358PBF electronic component of Infineon
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See Product Specifications
Part No.IRF9358PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9.2A; 2W; SO8
Datasheet: IRF9358PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.6836
10 : USD 1.4364
100 : USD 1.1353
500 : USD 0.8804
1000 : USD 0.6951
N/A

Obsolete
0
MOQ : 95
Multiples : 95
95 : USD 0.5128
475 : USD 0.4656
1520 : USD 0.4421
N/A

Obsolete
0
MOQ : 95
Multiples : 95
95 : USD 0.5128
475 : USD 0.4656
1520 : USD 0.4421
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.525
10 : USD 1.1532
30 : USD 1.1318
100 : USD 1.1127
500 : USD 1.1127
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.4126
10 : USD 0.9864
100 : USD 0.7582
500 : USD 0.6676
1000 : USD 0.571
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0148
3 : USD 0.9095
4 : USD 0.5572
52 : USD 0.5247
N/A

Obsolete
0
MOQ : 14
Multiples : 1
14 : USD 0.8687
25 : USD 0.7823
50 : USD 0.7666
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF9358PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9358PBF and other electronic components in the MOSFETs category and beyond.

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IRF9358PbF HEXFET Power MOSFET V -30 V DS S2 1 8 D2 D R DS(on) max 16.3 m G2 2 7 D2 ( V = -10V) GS R S1 3 6 D1 DS(on) max D 23.8 m ( V = -4.5V) GS G1 4 5 D1 Q 19 nC g (typical) SO-8 I D -9.2 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V -30 Drain-to-Source Voltage DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V -9.2 I T = 25C GS A D I T = 70C Continuous Drain Current, V 10V -7.3 A GS D A -73 I Pulsed Drain Current DM 2.0 P T = 25C Power Dissipation A D W P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C -55 to + 150 T Operating Junction and J C Storage Temperature Range T STG Notes through are on page 2 www.irf.com 1 1/2/11 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = -250 A Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V /T Breakdown Voltage Temp. Coefficient 0.02 V/C D DSS J V = -10V, I = -9.2A R 13.0 16.3 GS D DS(on) Static Drain-to-Source On-Resistance m V = -4.5V, I = -7.3A 19.0 23.8 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25 A DS GS D V Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DSS DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -20V GSS Gate-to-Source Forward Leakage -100 GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -7.3A gfs Forward Transconductance 23 S DS D Q Total Gate Charge 19 nC V = -15V, V = -4.5V, I = - 7.3A g DS GS D V = -10V Q Total Gate Charge 38 GS g V = -15V Q Gate-to-Source Charge 5.8 nC DS gs I = -7.3A Q Gate-to-Drain Charge 8.9 D gd R Gate Resistance 15 G t Turn-On Delay Time 5.7 V = -15V, V = -4.5V d(on) DD GS t Rise Time 7.2 I = -1.0A r D ns t R = 6.8 d(off) Turn-Off Delay Time 146 G t See Figs. 19a &19b Fall Time 69 f C V = 0V Input Capacitance 1740 GS iss C V = -25V Output Capacitance 360 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 240 rss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current -7.3 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -73 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 55 83 ns T = 25C, I = -2.0A, V = -24V rr DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 35 53 nC Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 62.5 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 4.6mH, R = 25, I = -6.4A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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