DirectFET P-Channel Power MOSFET Applications Isolation Switch for Input Power or Battery Application V V R R DSS GS DS(on) DS(on) High Side Switch for Inverter Applications -30V max 20V max 2.3m -10V 3.8m -4.5V Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Features and Benefits 67nC 29nC 9.4nC 315nC 59nC -1.8V Environmentaly Friendly Product RoHs Compliant Containing no Lead, no Bromide and no Halogen S Common-Drain P-Channel MOSFETs Provides G DD S High Level of Integration and Very Low RDS(on) DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP MC Description The IRF9383MTRPbF combines the latest HEXFET P-Channel Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Standard Pack Orderable part number Package Type Note Form Quantity IRF9383MTRPbF Tape and Reel 4800 DirectFET Medium Can IRF9383MTR1PbF Tape and Reel 1000TR1 suffix EOL notice 264 DirectFET Medium Can Absolute Maximum Ratings Parameter Max. Units V -30 Drain-to-Source Voltage DS V 20 V Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V 10V -22 GS D A 10V -17 I T = 70C Continuous Drain Current, V A GS D A Continuous Drain Current, V 10V -160 I T = 25C GS D C I Pulsed Drain Current -180 DM 12 14.0 I = -18A I = -22A D D V = -24V 12.0 DS 10 V = -15V DS 10.0 8 V = -6.0V DS 8.0 6 6.0 T = 125C J 4 4.0 2 2.0 T = 25C J 0 0.0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180 Q Total Gate Charge (nC) -V Gate -to -Source Voltage (V) G GS, Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Fig 1. Typical On-Resistance vs. Gate Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Typical R (m) DS(on) -V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = -250 A Drain-to-Source Breakdown Voltage -30 V DSS GS D Reference to 25C, I = -1.0mA V /T Breakdown Voltage Temp. Coefficient 0.0159 V/C D DSS J R V = -10V, I = -22A Static Drain-to-Source On-Resistance 2.3 2.9 DS(on) GS D m V = -4.5V, I = -18A 3.8 4.8 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -150 A DS GS D V / T Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) J I V = -24V, V = 0V Drain-to-Source Leakage Current -1.0 DSS DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GS GSS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -18A gfs Forward Transconductance 56 S DS D Q V = -15V, V = -10V, I = -18A Total Gate Charge 130 g DS GS D Q Total Gate Charge 67 g Q V = -15V Pre- Vth Gate-to-Source Charge 12 gs1 DS Q Post -Vth Gate-to-Source Charge 9.4 nC V = -4.5V gs2 GS Q I = -18A Gate-to-Drain Charge 29 gd D Q Gate Charge Overdrive 16.6 godr See Fig.15 Q Switch charge (Q + Q ) 38.4 sw gs2 gd V = -24V, V = 0V Q nC Output Charge 59 DS GS oss R Gate Resistance 6.5 G t V = -15V, V = -4.5V Turn-On Delay Time 29 d(on) DD GS I = -18A t Rise Time 160 D r ns t R = 1.8 Turn-Off Delay Time 115 d(off) G t Fall Time 110 See Fig.17 f C V = 0V Input Capacitance 7305 iss GS V = -15V C Output Capacitance 1780 pF DS oss C = 1.0KHz Reverse Transfer Capacitance 1030 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I Continuous Source Current MOSFET symbol S -114 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM -180 S p-n junction diode. (Body Diode) T = 25C, I = -18A, V = 0V V Diode Forward Voltage -1.2 V J S GS SD t T = 25C, I = -18A, ,V = -15V Reverse Recovery Time 52 78 ns rr J F DD Q Reverse Recovery Charge 315 470 nC di/dt = 500A/ s rr Pulse width 400s duty cycle 2%.