IRF9393PbF HEXFET Power MOSFET V -30 V DS S18 D V 25 V GS max S27 D R DS(on) max 19.4 m ( V = -10V) S 3 6 D GS I G 4 5 D D -9.2 A ( T = 25C) A SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V V max Direct Drive at High V GS GS Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9393PbF SO8 Tube/Bulk 95 IRF9393TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -30 DS V 25 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V -9.2 I T = 25C GS A D I T = 70C Continuous Drain Current, V 10V -7.3 A GS D A -75 I Pulsed Drain Current DM 2.5 P T = 25C Power Dissipation A D W Power Dissipation 1.6 P T = 70C D A Linear Derating Factor 0.02 W/C -55 to + 150 T Operating Junction and J C Storage Temperature Range T STG Notes through are on page 2 www.irf.com 1 11/3/10 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = -250 A BV Drain-to-Source Breakdown Voltage -30 V DSS GS D Reference to 25C, I = -1mA V /T Breakdown Voltage Temp. Coefficient 0.019 V/C D DSS J R V = -20V, I = -9.2A DS(on) 13.3 GS D Static Drain-to-Source On-Resistance V = -10V, I = -9.2A 15.6 19.4 m GS D V = -4.5V, I = -7.5A 25.6 32.5 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25 A DS GS D V Gate Threshold Voltage Coefficient -5.7 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DSS DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -25V GSS Gate-to-Source Forward Leakage -10 GS A V = 25V Gate-to-Source Reverse Leakage 10 GS V = -10V, I = -7.5A gfs Forward Transconductance 13 S DS D Q Total Gate Charge 14 nC V = -15V, V = -4.5V, I = - 7.5A g DS GS D V = -10V Q Total Gate Charge 25 38 GS g Q Gate-to-Source Charge 3.5 nC V = -15V gs DS I = -7.5A Q Gate-to-Drain Charge 6.4 D gd R G Gate Resistance 15 V = -15V, V = -4.5V t Turn-On Delay Time 16 d(on) DD GS t I = -1.0A Rise Time 44 D r ns t Turn-Off Delay Time 55 R = 6.8 d(off) G t Fall Time 49 See Figs. 20a &20b f C V = 0V Input Capacitance 1110 GS iss V = -25V C Output Capacitance 230 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 160 rss Avalanche Characteristics Typ. Max. Parameter Units E 100 Single Pulse Avalanche Energy mJ AS I Avalanche Current -7.5 A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I Continuous Source Current MOSFET symbol S -2.5 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM -75 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 24 36 ns T = 25C, I = -2.5A, V = -24V rr J F DD Q di/dt = 100A/s Reverse Recovery Charge 15 23 nC rr Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W 50 R Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 3.5mH, R = 25, I = -7.5A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com