X-On Electronics has gained recognition as a prominent supplier of IRF9530NPBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF9530NPBF MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF9530NPBF Infineon

Hot IRF9530NPBF electronic component of Infineon
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See Product Specifications
Part No.IRF9530NPBF
Manufacturer: Infineon
Category: MOSFET
Description: MOSFET P Trench 100V 14A 4V @ 250uA 200 mΩ @ 8.4A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF9530NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.474 ea
Line Total: USD 0.47

Availability - 33325
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1697
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 1.0639
10 : USD 0.8096
100 : USD 0.6837
500 : USD 0.6201
1000 : USD 0.506
2000 : USD 0.4801
5000 : USD 0.4632
10000 : USD 0.4541
25000 : USD 0.4476

9
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6207
10 : USD 0.5475
100 : USD 0.492
500 : USD 0.4668
1000 : USD 0.414
2000 : USD 0.3965
5000 : USD 0.37

11493
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 79
Multiples : 50
79 : USD 0.4095
250 : USD 0.4095
1250 : USD 0.4095
2500 : USD 0.4095
7500 : USD 0.4095

33325
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ : 1
Multiples : 1
1 : USD 0.474
10 : USD 0.3781
50 : USD 0.3376
100 : USD 0.286
500 : USD 0.2638
1000 : USD 0.2491

52895
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7969
10 : USD 0.621
100 : USD 0.5393
500 : USD 0.498
1000 : USD 0.4186
2000 : USD 0.4186
5000 : USD 0.4106
10000 : USD 0.4025
25000 : USD 0.3968

1920
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 89
Multiples : 89
89 : USD 0.4567
500 : USD 0.4485
1000 : USD 0.4469

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the IRF9530NPBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9530NPBF and other electronic components in the MOSFET category and beyond.

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The IRF9530NPBF is a P-type metallic-oxide-semiconductor field-effect transistor (MOSFET) with a 100V maximum drain-source voltage and 14A maximum continuous drain current. It features a low gate-to-source voltage, a low drain-to-source on-state resistance, and an excellent switching performance. This MOSFET is a compact three-terminal power device with a TO-220-3 package which is RoHS compliant. It provides a trench MOSFET technology with a maximum 4V gate-to-source voltage, a 250uA gate current, a 200mO on-state resistance, and a 8.4A diode current limitation. This part is manufactured by the Infineon Technologies AG in Germany.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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