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X-On Electronics has gained recognition as a prominent supplier of IRF9530NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9530NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9530NPBF Infineon

Hot IRF9530NPBF electronic component of Infineon
IRF9530NPBF Infineon
IRF9530NPBF MOSFETs
IRF9530NPBF  Semiconductors

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See Product Specifications
Part No. IRF9530NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P Trench 100V 14A 4V @ 250uA 200 mΩ @ 8.4A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF9530NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4486 ea
Line Total: USD 0.45 
Availability - 274
Ship by Fri. 24 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
169
Ship by Fri. 17 Jan to Thu. 23 Jan
MOQ : 175
Multiples : 1000
175 : USD 0.5076
2000 : USD 0.4358
5000 : USD 0.4313
10000 : USD 0.4271

8884
Ship by Fri. 17 Jan to Thu. 23 Jan
MOQ : 79
Multiples : 50
79 : USD 0.4095
250 : USD 0.3965
1000 : USD 0.39
2500 : USD 0.377
6250 : USD 0.3705

274
Ship by Fri. 24 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4486
10 : USD 0.3584
50 : USD 0.3192
100 : USD 0.2703
500 : USD 0.2497
1000 : USD 0.2365

43059
Ship by Wed. 15 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0505
10 : USD 0.7216
100 : USD 0.5225
500 : USD 0.462
1000 : USD 0.4048
2000 : USD 0.3927
5000 : USD 0.3916
10000 : USD 0.3839
25000 : USD 0.3773

1382
Ship by Fri. 17 Jan to Thu. 23 Jan
MOQ : 146
Multiples : 1
146 : USD 0.4452
200 : USD 0.4437
500 : USD 0.4355

10210
Ship by Fri. 17 Jan to Thu. 23 Jan
MOQ : 79
Multiples : 1
79 : USD 0.8205
80 : USD 0.8142
100 : USD 0.65
500 : USD 0.5414
1000 : USD 0.5327
2000 : USD 0.4814
5000 : USD 0.4533
10000 : USD 0.4489

169
Ship by Fri. 17 Jan to Thu. 23 Jan
MOQ : 175
Multiples : 175
175 : USD 0.5144
2000 : USD 0.4649
5000 : USD 0.4377
10000 : USD 0.4334

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the IRF9530NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9530NPBF and other electronic components in the MOSFETs category and beyond.

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The IRF9530NPBF is a P-type metallic-oxide-semiconductor field-effect transistor (MOSFET) with a 100V maximum drain-source voltage and 14A maximum continuous drain current. It features a low gate-to-source voltage, a low drain-to-source on-state resistance, and an excellent switching performance. This MOSFET is a compact three-terminal power device with a TO-220-3 package which is RoHS compliant. It provides a trench MOSFET technology with a maximum 4V gate-to-source voltage, a 250uA gate current, a 200mO on-state resistance, and a 8.4A diode current limitation. This part is manufactured by the Infineon Technologies AG in Germany.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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