PD - 90582 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 1000V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAG50 1000V 2.0 5.6 The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- tance combined with high transconductance superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switching Hermetically Sealed power supplies, motor controls, inverters, choppers, audio Simple Drive Requirements amplifiers and high energy pulse circuits. Ease of Paralleling Absolute Maximum Ratings Parameter Units I V = 0V, T = 25C Continuous Drain Current 5.6 D GS C A I V = 0V, T = 100C Continuous Drain Current 3.5 D GS C I Pulsed Drain Current 22 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 860 mJ AS I Avalanche Current 5.6 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 1.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5(typical) g For footnotes refer to the last page www.irf.com 1 01/24//01IRFAG50 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 1000 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 1.4 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 2.0 V =10V, I =3.5A DS(on) GS D Resistance 2.3 V = 10V, I =5.6A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I =250mA GS(th) DS GS D g Forward Transconductance 5.2 S ( )V > 15V, I =3.5A fs DS DS I Zero Gate Voltage Drain Current 25 V =800V, V =0V DSS DS GS A 250 V =800V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 88 200 V 10V, ID=5.6A g GS= Q Gate-to-Source Charge 8.8 20 nC V =500V gs DS Q Gate-to-Drain (Miller) Charge 48 110 gd t Turn-On Delay Time 30 V =400V*, I =5.6A, d(on) DD D t Rise Time 44 R =2.35 r G ns t Turn-Off Delay Time 210 d(off) t Fall Time 60 f L L Total Inductance 6.1 nH S + D Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 2400 V = 0V, V = 25V iss GS DS C Output Capacitance 240 pF f = 1.0MHz oss C Reverse Transfer Capacitance 80 rss *Equipment Limitation Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 5.6 S A I Pulse Source Current (Body Diode) 22 SM V Diode Forward Voltage 1.8 V T = 25C, I =5.6A, V = 0V j SD S GS t Reverse Recovery Time 1200 nS Tj = 25C, I =5.6A, di/dt 100A/ s rr F Q Reverse Recovery Charge 8.4 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 0.83 thJC C/W R Junction to Ambient 30 Typical socket mount thJA For footnotes refer to the last page 2 www.irf.com