PD - 96212A
IRFB3307ZGPbF
Applications
High Efficiency Synchronous Rectification in
HEXFET Power MOSFET
SMPS
Uninterruptible Power Supply
D
V
75V
DSS
High Speed Power Switching
Hard Switched and High Frequency Circuits R typ.
4.6m
DS(on)
max. 5.8m
G
I
128A
D (Silicon Limited)
Benefits
S
I
120A
D (Package Limited)
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and D
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
S
D
Lead-Free
G
Halogen-Free
TO-220AB
IRFB3307ZGPbF
GD S
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V (Silicon Limited) 128
D C
GS
I @ T = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 90
D C
A
I @ T = 25C
Continuous Drain Current, V @ 10V (Wire Bond Limited) 120
D C
GS
I
Pulsed Drain Current 512
DM
P @T = 25C
Maximum Power Dissipation 230 W
D C
1.5
Linear Derating Factor W/C
V
Gate-to-Source Voltage 20 V
GS
6.7
dv/dt Peak Diode Recovery V/ns
T
Operating Junction and -55 to + 175
J
T
STG Storage Temperature Range
C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
E
140 mJ
AS (Thermally limited)
I Avalanche Current
See Fig. 14, 15, 21a, 21b A
AR
Repetitive Avalanche Energy
E
mJ
AR
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
Junction-to-Case 0.65
JC
R 0.50 C/W
CS Case-to-Sink, Flat Greased Surface , TO-220
R
Junction-to-Ambient, TO-220 62
JA
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08/19/11
Static @ T = 25C (unless otherwise specified)
J
Symbol Parameter Min. Typ. Max. Units Conditions
V
Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A
(BR)DSS
GS D
V /T Breakdown Voltage Temp. Coefficient 0.094 V/C Reference to 25C, I = 5mA
(BR)DSS J D
R
Static Drain-to-Source On-Resistance 4.6 5.8 V = 10V, I = 75A
DS(on) m
GS D
V
Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A
GS(th)
DS GS D
R Internal Gate Resistance 0.70
G(int)
I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V
DSS
DS GS
250 V = 75V, V = 0V, T = 125C
DS GS J
I Gate-to-Source Forward Leakage 100 nA V = 20V
GSS GS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Dynamic @ T = 25C (unless otherwise specified)
J
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 320 S V = 50V, I = 75A
DS D
Q
Total Gate Charge 79 110 I = 75A
g
D
Q Gate-to-Source Charge 19 V = 38V
gs DS
nC
Q Gate-to-Drain Mille) Charge 24 V = 10V
gd
GS
Q Total Gate Charge Sync. (Q - Q )
55 I = 75A, V =0V, V = 10V
sync g gd
D DS GS
t Turn-On Delay Time 15 V = 49V
d(on) DD
t Rise Time 64 I = 75A
r D
ns
t
Turn-Off Delay Time 38 R = 2.6
d(off)
G
t
Fall Time 65 V = 10V
f
GS
C Input Capacitance 4750 V = 0V
iss GS
C
Output Capacitance 420 V = 50V
oss
DS
C
Reverse Transfer Capacitance 190 pF = 1.0MHz
rss
C eff. (ER)
Effective Output Capacitance (Energy Related) 440 V = 0V, V = 0V to 60V
oss GS DS
C eff. (TR) 410 V = 0V, V = 0V to 60V
oss Effective Output Capacitance (Time Related)
GS DS
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
120
S
(Body Diode) showing the
A
G
I
Pulsed Source Current 512 integral reverse
SM
S
(Body Diode)
p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V
SD J S GS
t T = 25C V = 64V,
Reverse Recovery Time 33 50 ns
rr J R
T = 125C I = 75A
39 59
J F
di/dt = 100A/ s
Q Reverse Recovery Charge 42 63 nC T = 25C
rr J
T = 125C
56 84
J
I T = 25C
Reverse Recovery Current 2.2 A
RRM J
t
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Calculated continuous current based on maximum allowable junction
I 75A, di/dt 1570A/ s, V V , T 175C.
SD DD (BR)DSS J
Pulse width 400s; duty cycle 2%.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time
oss
some lead mounting arrangements. as C while V is rising from 0 to 80% V .
oss DS DSS
Repetitive rating; pulse width limited by max. junction
C eff. (ER) is a fixed capacitance that gives the same energy as
oss
temperature.
C while V is rising from 0 to 80% V .
oss DS DSS
Limited by T , starting T = 25C, L = 0.050mH
R is measured at T approximately 90C.
Jmax J J
R = 25, I = 75A, V =10V. Part not recommended for use
G AS GS
above this value.
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