IRFB4019PbF Features Key Parameters Key Parameters Optimized for Class-D Audio V 150 V DS Amplifier Applications R typ. 10V m 80 DS(ON) Low R for Improved Efficiency DSON Q typ. 13 nC g Low Q and Q for Better THD and Improved G SW Q typ. 5.1 nC sw Efficiency R typ. 2.4 G(int) Low Q for Better THD and Lower EMI T max RR 175 C J 175C Operating Junction Temperature for D D Ruggedness Can Deliver up to 200W per Channel into 8 Load in Half-Bridge Configuration Amplifier G S D G S TO-220AB GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 17 A D C GS I T = 100C Continuous Drain Current, V 10V 12 D C GS Pulsed Drain Current I 51 DM Power Dissipation P T = 25C 80 W D C Power Dissipation P T = 100C 40 D C Linear Derating Factor 0.5 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.88 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA Notes through are on page 2 www.irf.com 1 3/2/06 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.19 V/C Reference to 25C, I = 1mA DSS J D R m Static Drain-to-Source On-Resistance 80 95 V = 10V, I = 10A DS(on) GS D V Gate Threshold Voltage 3.0 4.9 V V = V , I = 50A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -13 mV/C GS(th) J I Drain-to-Source Leakage Current 20 A V = 150V, V = 0V DSS DS GS 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS g Forward Transconductance 14 S V = 10V, I = 10A fs DS D Q Total Gate Charge 13 20 g Q Pre-Vth Gate-to-Source Charge 3.3 V = 75V gs1 DS Q Post-Vth Gate-to-Source Charge 0.95 nC V = 10V gs2 GS Q Gate-to-Drain Charge 4.1 I = 10A gd D Q Gate Charge Overdrive 4.7 See Fig. 6 and 19 godr Q Switch Charge (Q + Q ) 5.1 sw gs2 gd R Internal Gate Resistance 2.4 G(int) t Turn-On Delay Time 7.0 V = 75V, V = 10V d(on) DD GS t Rise Time 13 I = 10A r D t Turn-Off Delay Time 12 ns R = 2.4 d(off) G t Fall Time 7.8 f C Input Capacitance 800 V = 0V iss GS C Output Capacitance 74 pF V = 50V oss DS C Reverse Transfer Capacitance 19 = 1.0MHz, See Fig.5 rss C Effective Output Capacitance 99 V = 0V, V = 0V to 120V oss GS DS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 73 mJ AS Avalanche Current I See Fig. 14, 15, 17a, 17b A AR Repetitive Avalanche Energy E mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C Continuous Source Current 17 MOSFET symbol S C (Body Diode) A showing the I Pulsed Source Current 51 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 10A, V = 0V SD J S GS t Reverse Recovery Time 64 96 ns T = 25C, I = 10A rr J F Q di/dt = 100A/s Reverse Recovery Charge 160 240 nC rr Repetitive rating pulse width limited by max. junction temperature. R is measured at Starting T = 25C, L = 1.46mH, R = 25, I = 10A. J G AS Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive Pulse width 400s duty cycle 2%. avalanche information 2 www.irf.com