IRFB4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D V 300V DSS Uninterruptible Power Supply High Speed Power Switching R 56m DS(on) typ. Hard Switched and High Frequency Circuits G 69m max S I 38A D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S Lead-Free, RoHS Compliant D G TO-220Pak G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRFB4137PbF TO-220Pak Tube 50 IRFB4137PbF Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 38 D C GS I T = 100C Continuous Drain Current, V 10V 27 A D C GS I Pulsed Drain Current 152 DM P T = 25C Maximum Power Dissipation 341 W D C Linear Derating Factor 2.3 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 8.9 V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 414 mJ AS (Thermally limited) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.44 JC R Case-to-Sink, Flat Greased Surface C/W CS 0.50 Junction-to-Ambient R 62 JA 1 www.irf.com 2012 International Rectifier October 30, 2012 IRFB4137PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 300 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.24 V/C Reference to 25C, I = 3.5mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 56 69 m V = 10V, I = 24A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 20 V =300 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =300V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.3 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Transconductance 45 S V = 50V, I =24A DS D Q Total Gate Charge 83 125 I = 24A g D Q Gate-to-Source Charge 28 42 nC V = 150V gs DS Q Gate-to-Drain Charge 26 39 V = 10V gd GS t Turn-On Delay Time 18 V = 195V d(on) DD t Rise Time 23 I = 24A r D ns t Turn-Off Delay Time 34 R = 2.2 d(off) G t Fall Time 20 V = 10V f GS C Input Capacitance 5168 V = 0V iss GS C Output Capacitance 300 V = 50V oss DS C Reverse Transfer Capacitance 77 = 1.0MHz rss pF V = 0V, VDS = 0V to 240V GS C Effective Output Capacitance (Energy Related) 196 oss eff.(ER) See Fig.11 C Output Capacitance (Time Related) 265 V = 0V, VDS = 0V to 240V oss eff.(TR) GS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol I 38 S (Body Diode) showing the A G Pulsed Source Current integral reverse I 152 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 24A,V = 0V SD J S GS 302 T = 25C V = 255V J DD t Reverse Recovery Time ns rr 379 T = 125C I = 24A, J F 1739 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 2497 T = 125C J I Reverse Recovery Current 13 A T = 25C J RRM Notes: Repetitive rating pulse width limited by max. junction temperature. Recommended max EAS limit, starting T = 25C, L = 1.56mH, R = 50, I = 24A, V =10V. J G AS GS I 24A, di/dt 1771A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 Ris measured at T approximately 90C J 2 www.irf.com 2012 International Rectifier October 30, 2012