IRFB4229PbF Features Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, V min 250 V DS Energy Recovery and Pass Switch Applications V typ. 300 V DS (Avalanche) Low E Rating to Reduce Power PULSE m R typ. 10V 38 DS(ON) Dissipation in PDP Sustain, Energy Recovery I max T = 100C and Pass Switch Applications 91 A RP C Low Q for Fast Response G T max 175 C J High Repetitive Peak Current Capability for Reliable Operation D D Short Fall & Rise Times for Fast Switching 175C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness G S and Reliability D G Class-D Audio Amplifier 300W-500W S TO-220AB (Half-bridge) GD S Gate Drain Source Description HEXFET Power MOSFET MOSFET MOSFET %& ( ) * * ) MOSFET + * * Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 30 V GS I T = 25C Continuous Drain Current, V 10V 46 A D C GS I T = 100C Continuous Drain Current, V 10V 33 D C GS I Pulsed Drain Current 180 DM I T = 100C 91 Repetitive Peak Current RP C P T = 25C Power Dissipation 330 W D C P T = 100C Power Dissipation 190 D C 2.2 Linear Derating Factor W/C T Operating Junction and -40 to + 175 C J T Storage Temperature Range STG Soldering Temperature for 10 seconds 300 Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) N Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA Notes through are on page 8 www.irf.com 1 09/10/07 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 250 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 210 mV/C D DSS J R V = 10V, I = 26A Static Drain-to-Source On-Resistance 38 46 m GS D DS(on) V = V , I = 250A V Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -14 mV/C GS(th) J V = 250V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 250V, V = 0V, T = 125C 1.0 mA DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS g V = 25V, I = 26A Forward Transconductance 83 S DS D fs Q V = 125V, I = 26A, V = 10V Total Gate Charge 72 110 nC g DD D GS Q Gate-to-Drain Charge 26 gd V = 125V, V = 10V t Turn-On Delay Time 18 DD GS d(on) t I = 26A Rise Time 31 ns r D t Turn-Off Delay Time 30 R = 2.4 d(off) G t See Fig. 22 Fall Time 21 f t Shoot Through Blocking Time 100 ns V = 200V, V = 15V, R = 4.7 st DD GS G L = 220nH, C= 0.3F, V = 15V GS 790 = 200V, R = 4.7, T = 25C E Energy per Pulse J V PULSE DS G J L = 220nH, C= 0.3F, V = 15V GS 1390 V = 200V, R = 4.7, T = 100C DS G J C V = 0V Input Capacitance 4560 iss GS V = 25V C Output Capacitance 390 pF DS oss C = 1.0MHz, Reverse Transfer Capacitance 100 rss V = 0V, V = 0V to 200V C eff. Effective Output Capacitance 290 GS DS oss L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Typ. Max. Parameter Units E 130 Single Pulse Avalanche Energy mJ AS E 33 mJ Repetitive Avalanche Energy AR V Repetitive Avalanche Voltage 300 V DS(Avalanche) I 26 A Avalanche Current AS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I T = 25C Continuous Source Current MOSFET symbol S C 46 showing the (Body Diode) A I Pulsed Source Current integral reverse SM 180 p-n junction diode. (Body Diode) T = 25C, I = 26A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t T = 25C, I = 26A, V = 50V Reverse Recovery Time 190 290 ns rr J F DD Q Reverse Recovery Charge 840 1260 nC di/dt = 100A/s rr 2 www.irf.com