X-On Electronics has gained recognition as a prominent supplier of IRFB5615PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB5615PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB5615PBF Infineon

Hot IRFB5615PBF electronic component of Infineon
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Part No.IRFB5615PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET Audio MOSFT 150V 34A 41mOhm 26nC
Datasheet: IRFB5615PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0531 ea
Line Total: USD 1.05 
Availability - 1153
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
669
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.0679
2000 : USD 1.0392
5000 : USD 1.0197
10000 : USD 0.9965

339
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 50
Multiples : 50
50 : USD 0.6955
200 : USD 0.6955
1000 : USD 0.6955
2000 : USD 0.6955
6250 : USD 0.6955

1153
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0531
10 : USD 0.8779
50 : USD 0.7027
100 : USD 0.616
500 : USD 0.5633
1000 : USD 0.537

3233
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.826
10 : USD 1.144
100 : USD 0.9438
250 : USD 0.9416
500 : USD 0.8712
1000 : USD 0.836

271
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.184
10 : USD 1.512
16 : USD 1.05
44 : USD 0.994
1000 : USD 0.966

970
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 52
Multiples : 1
52 : USD 2.1778
100 : USD 2.0804
250 : USD 1.9969
500 : USD 1.9249
1000 : USD 1.8621

611
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 52
Multiples : 1
52 : USD 2.6499

5858
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 37
Multiples : 1
37 : USD 1.1132
50 : USD 1.1115
100 : USD 1.1099
200 : USD 1.0953
500 : USD 1.092
1000 : USD 1.0905
2000 : USD 1.0855
4000 : USD 1.04

1367
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 10
Multiples : 1
10 : USD 1.5255
100 : USD 1.0867
250 : USD 1.0757
500 : USD 0.7714
1000 : USD 0.6885

669
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 690
Multiples : 690
690 : USD 0.6498
2000 : USD 0.6382
5000 : USD 0.6318

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the IRFB5615PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB5615PBF and other electronic components in the MOSFETs category and beyond.

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The Infineon IRFB5615PBF is a high-power audio MOSFET with a channel-drain voltage rating of 150V and a continuous drain current rating of 34A. It has a low on-resistance of 41mO and an intrinsic capacitance of 26nC, enabling clean, efficient switching at high frequencies for superior audio performance. The device also features a low gate threshold voltage of 4V and a low RDS(on) of 40mO to improve power efficiency in class-D audio amplifiers. Additionally, this MOSFET has a rugged package design that reliably withstands harsh environment conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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