Applications HEXFET Power MOSFET Brushed Motor drive applications D V 40V DSS BLDC Motor drive applications Battery powered circuits R typ. 2.0m DS(on) Half-bridge and full-bridge topologies max. 2.5m G Synchronous rectifier applications I 208A D Resonant mode power supplies S I 120A OR-ing and redundant power switches D (Package Limited) DC/DC and AC/DC converters DC/AC Inverters D S Benefits D G Improved Gate, Avalanche and Dynamic dV/dt TO-220AB Ruggedness IRFB7440GPbF Fully Characterized Capacitance and Avalanche SOA GD S Enhanced body diode dV/dt and dI/dt Capability Gate Drain Source Lead-Free Halogen-Free Standard Pack Base Part Number Package Type Complete Part Number Form Quantity IRFB7440GPbF TO-220 Tube 50 IRFB7440GPbF 7.0 240 I = 100A D Limited By Package 6.0 200 5.0 160 T = 125C 4.0 120 J 3.0 80 2.0 40 T = 25C J 1.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 208 I T = 25C Continuous Drain Current, V 10V D C GS 147 I T = 100C Continuous Drain Current, V 10V D C GS A 120 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS Pulsed Drain Current 772 I DM 208 P T = 25C Maximum Power Dissipation W D C 1.4 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS Operating Junction and -55 to + 175 T J Storage Temperature Range C T STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 238 mJ AS (Thermally limited) Single Pulse Avalanche Energy 560 E AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.72 R JC Case-to-Sink, Flat Greased Surface C/W R 0.50 CS Junction-to-Ambient R 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 5.0mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 2.0 2.5 V = 10V, I = 100A DS(on) GS D m 3.0 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.6 G Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.048mH, R = 50, I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1330A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400 s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T starting T = 25C, L= 1mH, R = 50, I = 34A, V =10V. Jmax J G AS GS