StrongIRFET IRFB7545PbF HEXFET Power MOSFET Application Brushed motor drive applications D V 60V DSS BLDC motor drive applications Battery powered circuits R typ. 4.9m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.9m Resonant mode power supplies S I 95A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters Benefits S D Improved gate, avalanche and dynamic dV/dt ruggedness G Fully characterized capacitance and avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7545PbF TO-220 Tube 50 IRFB7545PbF 14 100 I = 57A D 12 80 T = 125C 10 J 60 8 40 6 20 4 T = 25C J 0 2 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18 20 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFB7545PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 95 D C GS I T = 100C Continuous Drain Current, V 10V 67 A D C GS I Pulsed Drain Current 380 DM P T = 25C Maximum Power Dissipation 125 W D C Linear Derating Factor 0.83 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics Symbol Parameter Max. Units E 140 mJ Single Pulse Avalanche Energy AS (Thermally limited) E Single Pulse Avalanche Energy 235 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 1.21 JC Case-to-Sink, Flat Greased Surface C/W R 0.50 CS Junction-to-Ambient R 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 46 mV/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 4.9 5.9 V = 10V, I = 57A DS(on) m GS D 6.3 V = 6.0V, I = 29A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.3 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 88H, R = 50 , I = 57A, V =10V. Jmax J G AS GS I 57A, di/dt 810A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 22A, V =10V. Jmax J G AS GS 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 5, 2014