PD-90426D IRFF120 JANTX2N6788 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6788 HEXFET TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A T0-39 The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on- state resistance combined with high transconductance. The HEXFET transistors also feature all of the well Features: established advantages of MOSFETs such as voltage Repetitive Avalanche Ratings control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 6.0 D GS C A I V = 10V, T = 100C Continuous Drain Current 3.5 D GS C I Pulsed Drain Current 24 DM P T = 25C Max. Power Dissipation 20 W D C Linear Derating Factor 0.16 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 0.242 mJ AS I Avalanche Current 2.2 A AR E Repetitive Avalanche Energy 2.0 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction -55 to 150 J C T Storage Temperature Range STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98 (typical) g For footnotes refer to the last page www.irf.com 1 IRFF120, JANTX2N6788, JANTXV2N6788 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.10 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.30 V = 10V, I = 3.5A DS(on) GS D Resistance 0.35 V =10V, I = 6.0A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 1.5 S V > 15V, I = 3.5A fs DS DS I Zero Gate Voltage Drain Current 25 V = 80V, V =0V DSS DS GS 250 A V = 80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 7.7 18 V =10V, ID = 6.0A g GS Q Gate-to-Source Charge 0.7 4.0 nC V = 50V gs DS Q Gate-to-Drain (Miller) Charge 2.0 9.0 gd t Turn-On Delay Time 40 V = 35V, I = 6.0A, d(on) DD D t Rise Time 70 V = 10V, R = 7.5 r GS G ns t Turn-Off Delay Time 40 d(off) t Fall Time 70 f L L Total Inductance 7.0 Measured from drain lead (6mm/0.25in. from S + D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 350 V = 0V, V = 25V iss GS DS C Output Capacitance 150 pF f = 1.0MHz oss C Reverse Transfer Capacitance 24 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 6.0 S A I Pulse Source Current (Body Diode) 24 SM V Diode Forward Voltage 1.8 V T = 25C, I =6.0A, V = 0V j SD S GS t Reverse Recovery Time 240 ns T = 25C, I = 6.0A, di/dt 100A/s j rr F Q Reverse Recovery Charge 2.0 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 6.25 thJC C/W R Junction-to-Ambient 175 Typical socket mount. thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com