PD-90424D IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET TRANSISTORS JANTXV2N6784 THRU-HOLE-TO-205AF (TO-39) REF:MIL-PRF-19500/556 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF210 200V 1.5 2.25A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-39 The efficient geometry and unique processing of this latest State of the Art design achieves: very low on- state resistance combined with high transconductance. Features: The HEXFET transistors also feature all of the well Repetitive Avalanche Ratings established advantages of MOSFETs such as voltage Dynamic dv/dt Rating control, very fast switching, ease of parelleling and Hermetically Sealed temperature stability of the electrical parameters. Simple Drive Requirements Ease of Paralleling They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, ESD Rating: Class 1A per MIL-STD-750, Method 1020 audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 2.25 D GS C A I V = 10V, T = 100C Continuous Drain Current 1.50 D GS C I Pulsed Drain Current 9.0 DM P T = 25C Max. Power Dissipation 15 W D C Linear Derating Factor 0.12 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 48 mJ AS I Avalanche Current 2.25 A AR E Repetitive Avalanche Energy 1.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98 (typical) g For footnotes refer to the last page www.irf.com 1 IRFF210, JANTX2N6784 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.25 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 1.5 V = 10V, I = 1.50A DS(on) GS D Resistance 1.725 V =10V, I = 2.25A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 0.9 S V = 15V, I = 1.50A fs DS DS I Zero Gate Voltage Drain Current 25 V = 160V, V = 0V DSS DS GS 250 A V = 160V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS I Gate-to-Source Leakage Reverse -100 nA V = -20V GSS GS Q Total Gate Charge 6.2 V =10V, ID = 2.25A g GS Q Gate-to-Source Charge 1.2 nC V = 100V gs DS Q Gate-to-Drain (Miller) Charge 5.0 gd t Turn-On Delay Time 15 V = 100V, I = 2.25A, d(on) DD D t Rise Time 20 V =10V, R = 7.5 r GS G ns t Turn-Off Delay Time 30 d(off) t Fall Time 20 f L L Total Inductance 7.0 Measured from drain lead (6mm/0.25in. from S + D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 140 V = 0V, V = 25V iss GS DS C Output Capacitance 55 pF f = 1.0MHz oss C Reverse Transfer Capacitance 8.6 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 2.25 S A I Pulse Source Current (Body Diode) 9.0 SM V Diode Forward Voltage 1.5 V T = 25C, I = 2.25A, V = 0V j SD S GS t Reverse Recovery Time 350 ns T = 25C, I = 2.25A, di/dt 100A/s j rr F Q Reverse Recovery Charge 3.0 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 8.3 thJC C/W R Junction-to-Ambient 175 Typical socket mount. thJA Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com