PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40 5.5A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power supplies, motor controls, inverters, chop- Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. Ease of Paralleling Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 5.5 D GS C A I V = 10V, T = 100C Continuous Drain Current 3.5 D GS C I Pulsed Drain Current 22 DM P T = 25C Max. Power Dissipation 25 W D C Linear Derating Factor 0.20 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 54 mJ AS I Avalanche Current A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 4.5 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g For footnotes refer to the last page www.irf.com 1 01/22/01IRFF230 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.25 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.40 V = 10V, I = 3.5A DS(on) GS D Resistance 0.46 V =10V, I =5.5A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D g Forward Transconductance 2.5 S ( ) V > 15V, I = 3.5A fs DS DS I Zero Gate Voltage Drain Current 25 V = 160V, V =0V DSS DS GS 250 A V = 160V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS I Gate-to-Source Leakage Reverse -100 nA V = -20V GSS GS Q Total Gate Charge 7.4 42.1 V =10V, ID =5.5A g GS Q Gate-to-Source Charge 2.5 5.3 nC V = 100V gs DS Q Gate-to-Drain (Miller) Charge 6.0 28 gd t Turn-On Delay Time 30 V = 100V, I = 5.5A, d(on) DD D t Rise Time 50 R = 7.5 r G ns t Turn-Off Delay Time 50 d(off) t Fall Time 40 f L L Total Inductance 7.0 Measured from drain lead (6mm/0.25in. from S + D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 600 V = 0V, V = 25V iss GS DS C Output Capacitance 250 pF f = 1.0MHz oss C Reverse Transfer Capacitance 80 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 5.5 S A I Pulse Source Current (Body Diode) 22 SM V Diode Forward Voltage 1.4 V T = 25C, I =5.5A, V = 0V j SD S GS t Reverse Recovery Time 500 nS Tj = 25C, I =5.5A, di/dt 100A/ s rr F Q Reverse Recovery Charge 6.0 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 5.0 thJC C/W R Junction-to-Ambient 175 Typical socket mount. thJA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com