PD-90552D IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFET TRANSISTORS JANTXV2N6845 THRU-HOLE - TO-205AF (TO-39) REF:MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9120 -100V 0.60 -4.0A The HEXFET technology is the key to International TO-39 Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on- state resistance combined with high transconductance. Features: Repetitive Avalanche Ratings The HEXFET transistors also feature all of the well Dynamic dv/dt Rating established advantages of MOSFETs such as voltage Hermetically Sealed control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. Simple Drive Requirements Ease of Paralleling They are well suited for applications such as switching ESD Rating: Class 1B per MIL-STD-750, power supplies, motor controls, inverters, choppers, Method 1020 audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = -10V, T = 25C Continuous Drain Current -4.0 D GS C A I V = -10V, T = 100C Continuous Drain Current -2.6 D GS C I Pulsed Drain Current -16 DM P T = 25C Max. Power Dissipation 20 W D C Linear Derating Factor 0.16 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 364 mJ AS I Avalanche Current -4.0 A AR E Repetitive Avalanche Energy 2.0 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction -55 to 150 J C T Storage Temperature Range STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g For footnotes refer to the last page www.irf.com 1 IRFF9120 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown -0.10 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.60 V = -10V, I = -2.6A DS(on) GS D Resistance 0.69 V =-10V, I =-4.0A GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 1.25 S V = -15V, I = -2.6A fs DS DS I Zero Gate Voltage Drain Current -25 V = -80V, V = 0V DSS DS GS -250 A V = -80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS I Gate-to-Source Leakage Reverse 100 nA V = 20V GSS GS Q Total Gate Charge 4.3 16.3 V = -10V, ID = -4.0A g GS Q Gate-to-Source Charge 1.3 4.7 nC V = -50V gs DS Q Gate-to-Drain (Miller) Charge 1.0 9.0 gd t Turn-On Delay Time 60 V = -50V, I = -4.0A, d(on) DD D t Rise Time 100 V = -10V, R = 7.5 r GS G ns t Turn-Off Delay Time 50 d(off) t Fall Time 70 f L L Total Inductance 7.0 Measured from drain lead (6mm/0.25in. from S + D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 380 V = 0V, V = -25V iss GS DS C Output Capacitance 170 pF f = 1.0MHz oss C Reverse Transfer Capacitance 45 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -4.0 S A I Pulse Source Current (Body Diode) -16 SM V Diode Forward Voltage -4.8 V T = 25C, I = -4.0A, V = 0V j SD S GS t Reverse Recovery Time 200 ns Tj = 25C, I = -4.0A, di/dt -100A/s rr F Q Reverse Recovery Charge 3.1 C V -50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 6.25 thJC C/W R Junction-to-Ambient 175 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com