PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE (MO-036AB) 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG6110 0.7 1.0A N IRFG6110 1.4 -0.75A P HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling Features: and electrical parameter temperature stability. They are well- Simple Drive Requirements suited for applications such as switching power supplies, motor Ease of Paralleling controls, inverters, choppers, audio amplifiers, high energy Hermetically Sealed pulse circuits, and virtually any application where high reliability Electrically Isolated is required. The HEXFET transistors totally isolated package Dynamic dv/dt Rating eliminates the need for additional isolating material between the Light-weight device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings (Per Die) Parameter N-Channel P-Channel Units I V = 10V, T = 25C Continuous Drain Current 1.0 -0.75 D GS C A I V = 10V, T = 100C Continuous Drain Current 0.6 -0.5 D GS C I Pulsed Drain Current 4.0 -3.0 DM P T = 25C Max. Power Dissipation 1.4 1.4 W D C Linear Derating Factor 0.011 0.011 W/C V Gate-to-Source Voltage 20 20 V GS E Single Pulse Avalanche Energy 75 75 mJ AS I Avalanche Current 1.0 -0.75 A AR E Repetitive Avalanche Energy 0.14 0.14 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 -5.5 V/ns T Operating Junction -55 to 150 J C T Storage Temperature Range STG Lead Temperature 300 (0.63 in./1.6 mm from case for 10s) Weight 1.3 (Typical) g www.irf.com 1 IRFG6110 Electrical Characteristics For Each N-Channel Device Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.13 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.7 V = 10V, I = 0.6A DS(on) GS D Resistance 0.8 V = 10V, I = 1.0A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 0.86 S V > 15V, I = 0.6A fs DS DS I Zero Gate Voltage Drain Current 25 V = 80V, V = 0V DSS A DS GS 250 V = 80V, DS V = 0V, T =125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 15 V =10V, I = 1.0A, g GS D Q Gate-to-Source Charge 7.5 nC V = 50V gs DS Q Gate-to-Drain (Miller) Charge 7.5 gd t Turn-On Delay Time 20 V = 50V, I = 1.0A, d(on) DD D t Rise Time 25 V =10V, R = 7.5 r GS G ns t Turn-Off Delay Time 40 d(off) t Fall Time 40 f L + L Total Inductance 10 nH S D Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 180 V = 0V, V = 25V iss GS DS C Output Capacitance 82 pF f = 1.0MHz oss C Reverse Transfer Capacitance 15 rss Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 1.0 S A I Pulse Source Current (Body Diode) 4.0 SM V Diode Forward Voltage 1.5 V Tj = 25C, I = 1.0A, V = 0V SD S GS t Reverse Recovery Time 200 nS Tj = 25C, I = 1.0A, di/dt 100A/s rr F Q Reverse Recovery Charge 0.83 nC V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions R Junction-to-Case 17 thJC C/W R Junction-to-Ambient 90 thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes, refer to the last page 2 www.irf.com