IRFH3702PbF Applications HEXFET Power MOSFET Synchronous Buck Converter for Computer V R max Qg DSS DS(on) Processor Power Isolated DC to DC Converters for Network and 7.1m V = 10V 30V 9.6nC GS Telecom Buck Converters for Set-Top Boxes Benefits Low R DS(ON) Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free (Qualified up to 260C Reflow) 3mm x 3mm PQFN RoHS compliant (Halogen Free) Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 16 D A GS I T = 70C Continuous Drain Current, V 10V A GS 12 D Continuous Drain Current, V 10V I T = 25C GS 42 A D C I T = 25C Continuous Drain Current, V 10V (Package Limited) 25 D C GS I 120 DM Pulsed Drain Current P T = 25C 2.8 A Power Dissipation D W T = 70C P 1.8 D A Power Dissipation Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R 6.0 JC Junction-to-Case R JA 45 Junction-to-Ambient C/W R 44 JA Junction-to-Ambient (t<10s) ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 09/21/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 5.7 7.1 V = 10V, I = 16A DS(on) GS D m 8.7 11.8 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.5 mV/C I DSS Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 37 S V = 15V, I = 12A DS D Q Total Gate Charge 9.6 14 g Q Pre-Vth Gate-to-Source Charge 2.4 V = 15V gs1 DS Q gs2 Post-Vth Gate-to-Source Charge 1.2 V = 4.5V GS nC Q gd Gate-to-Drain Charge 3.1 I = 12A D Q godr Gate Charge Overdrive 2.9 See Fig.17 & 18 Q Switch Charge (Q + Q ) sw gs2 gd 4.3 Q oss Output Charge 7.4 nC V = 16V, V = 0V DS GS R Gate Resistance 2.2 G t Turn-On Delay Time 9.6 V = 15V, V = 4.5V d(on) DD GS t r Rise Time 15 I = 12A D ns t d(off) Turn-Off Delay Time 11 R =1.8 G t f Fall Time 5.8 See Fig.15 C iss Input Capacitance 1510 V = 0V GS C oss Output Capacitance 306 V = 15V pF DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E 77 mJ AS Single Pulse Avalanche Energy I 12 A AR Avalanche Current Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 3.5 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 120 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t Reverse Recovery Time 17 26 ns T = 25C, I = 12A, V = 15V rr J F DD /dt = 225A/s Q Reverse Recovery Charge 15 23 nC di rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com