IRFH3707PbF Applications HEXFET Power MOSFET Synchronous Buck Converter for Computer Processor Power V R max Qg DSS DS(on) Isolated DC to DC Converters for Network and 12.4m V = 10V 30V 5.4nC GS Telecom Buck Converters for Set-Top Boxes System/load switch Benefits Low R DS(ON) Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free (Qualified up to 260C Reflow) 3mm x 3mm PQFN RoHS compliant (Halogen Free) Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 12 A GS D I T = 70C Continuous Drain Current, V 10V GS 9.4 D A Continuous Drain Current, V 10V I T = 25C GS 29 A D C I T = 25C Continuous Drain Current, V 10V (Package Limited) 18 D C GS Pulsed Drain Current I 96 DM Power Dissipation P T = 25C 2.8 A D W Power Dissipation P T = 70C 1.8 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 7.5 JC Junction-to-Ambient R JA 45 C/W R JA 31 Junction-to-Ambient (t<10s) ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 09/17/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.02 V/C = 1mA DSS J Reference to 25C, I D R Static Drain-to-Source On-Resistance 9.4 12.4 V = 10V, I = 12A DS(on) GS D m 14.5 17.9 V = 4.5V, I = 9.4A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.2 mV/C I DSS Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 17 S V = 15V, I = 9.4A DS D Q g Total Gate Charge 5.4 8.1 Q gs1 Pre-Vth Gate-to-Source Charge 1.1 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 0.7 V = 4.5V GS nC Q gd Gate-to-Drain Charge 2.2 I = 9.4A D Q Gate Charge Overdrive 1.5 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 2.9 sw gs2 gd Q Output Charge 3.8 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.0 G t d(on) Turn-On Delay Time 9.0 V = 15V, V = 4.5V DD GS t r Rise Time 11 I = 9.4A D ns t d(off) Turn-Off Delay Time 9.9 R =1.3 G t Fall Time 5.6 See Fig.15 f C Input Capacitance 755 V = 0V iss GS C Output Capacitance 171 V = 15V oss pF DS C rss Reverse Transfer Capacitance 83 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 13 mJ Avalanche Current I AR 9.4 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 3.5 (Body Diode) showing the A G I Pulsed Source Current SM integral reverse 96 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 9.4A, V = 0V J S GS t rr Reverse Recovery Time 20 30 ns T = 25C, I = 9.4A, V = 15V DD J F Q di/dt = 200A/s rr Reverse Recovery Charge 27 41 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com