HEXFET Power MOSFET V 100 V DS R DS(on) max 9.0 m ( V = 10V) GS Q 67 g (typical) nC R 1.2 G (typical) I D PQFN 5X6 mm 100 A ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 m) Lower Conduction Losses Low Thermal Resistance to PCB (<0.5C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5010TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5010TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 13 D A GS I T = 70C Continuous Drain Current, V 10V 11 D A GS 100 I T = 25C Continuous Drain Current, V 10V A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 70 D C(Bottom) GS Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 250 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9. Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 7.5 9.0 V = 10V, I = 50A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 150 A DS GS D V Gate Threshold Voltage Coefficient -8.3 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 206 S V = 25V, I = 50A DS D Q Total Gate Charge 67 101 g Q Pre-Vth Gate-to-Source Charge 12 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 5.3 V = 10V gs2 GS nC Q Gate-to-Drain Charge 18 I = 50A gd D Q Gate Charge Overdrive 32 godr Q Switch Charge (Q + Q ) 23.3 sw gs2 gd Q Output Charge 18 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 9 V = 50V, V = 10V d(on) DD GS t Rise Time 12 I = 50A r D ns t Turn-Off Delay Time 27 R =1.3 d(off) G t Fall Time 8.6 f C Input Capacitance 4340 V = 0V iss GS C Output Capacitance 425 pF V = 25V oss DS C Reverse Transfer Capacitance 162 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 227 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the G A I Pulsed Source Current integral reverse SM S 400 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 34 51 ns T = 25C, I = 50A, V = 50V rr J F DD di/dt = 500A/s Q Reverse Recovery Charge 256 384 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 0.5 JC R (Top) Junction-to-Case 15 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA