HEXFET Power MOSFET V 200 V DS R DS(on) max 55 m ( V = 10V) GS nC Q 36 g (typical) R 1.9 G (typical) I D 34 A ( T = 25C) c(Bottom) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low R Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 0.8C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5020TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5020TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 200 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 5.1 D A GS I T = 70C Continuous Drain Current, V 10V 4.1 D A GS I T = 25C Continuous Drain Current, V 10V 34 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 21 A D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V 7.8 D C(Top) GS I T = 100C Continuous Drain Current, V 10V 4.9 D C(Top) GS Pulsed Drain Current 63 I DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 8.3 D C(Top) Linear Derating Factor 0.07 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.22 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 47 55 V = 10V, I = 7.5A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V GS(th) V = V , I = 150A DS GS D V Gate Threshold Voltage Coefficient -12 mV/C GS(th) Drain-to-Source Leakage Current 20 A V = 200V, V = 0V I DSS DS GS mA 1.0 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 18 S V = 50V, I = 7.5A DS D Q Total Gate Charge 36 54 g Q Pre-Vth Gate-to-Source Charge 8.6 V = 100V gs1 DS Q Post-Vth Gate-to-Source Charge 2.1 V = 10V gs2 GS nC Q Gate-to-Drain Charge 11 I = 7.5A gd D Q Gate Charge Overdrive 14 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 13 sw gs2 gd Q Output Charge 13 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.9 G t Turn-On Delay Time 9.3 V = 100V, V = 10V d(on) DD GS t Rise Time 7.7 I = 7.5A r D ns t Turn-Off Delay Time 21 R =1.8 d(off) G t Fall Time 6.0 See Fig.15 f C Input Capacitance 2290 V = 0V iss GS pF C Output Capacitance 120 V = 100V oss DS C Reverse Transfer Capacitance 33 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 320 mJ AS Avalanche Current I 7.5 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 7.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 63 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 7.5A, V = 0V SD J S GS t Reverse Recovery Time 45 68 ns T = 25C, I = 7.5A, V = 100V rr J F DD Q Reverse Recovery Charge 459 689 nC di/dt = 500A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R (Bottom) Junction-to-Case 0.5 0.8 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 21 JA