HEXFET Power MOSFET V 100 V DS R DS(on) max 12.4 m ( V = 10V) GS Q 54 g (typical) nC R 1.5 G (typical) I D PQFN 5X6 mm 63 A ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 12.4 m) Lower Conduction Losses Low Thermal Resistance to PCB (< 1.1C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5110TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5110TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 11 D A GS I T = 70C Continuous Drain Current, V 10V 9.0 D A GS I T = 25C Continuous Drain Current, V 10V 63 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 40 D C(Bottom) GS Pulsed Drain Current I 252 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 114 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 10.3 12.4 m V = 10V, I = 37A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -8.8 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 286 S V = 25V, I = 37A DS D Q Total Gate Charge 54 81 g Q Pre-Vth Gate-to-Source Charge 13 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 3.9 V = 10V gs2 GS nC Q Gate-to-Drain Charge 15 I = 37A gd D Q Gate Charge Overdrive 22 godr Q Switch Charge (Q + Q ) 19 sw gs2 gd Q Output Charge 14 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.5 G t Turn-On Delay Time 7.8 V = 50V, V = 10V d(on) DD GS t Rise Time 9.6 I = 37A r D ns t Turn-Off Delay Time 22 R =1.3 d(off) G t Fall Time 6.4 f C Input Capacitance 3152 V = 0V iss GS C Output Capacitance 324 pF V = 25V oss DS C Reverse Transfer Capacitance 121 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 93 mJ AS Avalanche Current I 37 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 63 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 252 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 37A, V = 0V SD J S GS t Reverse Recovery Time 34 51 ns T = 25C, I = 37A, V = 50V rr J F DD Q di/dt = 500A/s Reverse Recovery Charge 237 356 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.1 JC Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA