Strong IRFET IRFH5304PbF V 30 V DSS R DS(on) max 4.5 m ( V =10V) GS Qg 16 nC (typical) I D 79 A ( T = 25C) c(Bottom) PQFN 5 x 6 mm Applications Control MOSFET for Buck Converters Features and Benefits Features Benefits Low charge (typical 16nC) Lower Conduction Losses Low Thermal Resistance to PCB (<2.7C/W) Increased Power Density 100% Rg Tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques E as ier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH5304PbF PQFN 5 mm x 6 mm Tape and Reel 4000 IRFH5304TRPbF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 22 D A GS I T = 70C Continuous Drain Current, V 10V 17 D A GS I T = 25C Continuous Drain Current, V 10V 79 D c(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 50 D c(Bottom) GS I 320 Pulsed Drain Current DM P T = 25C Power Dissipation 3.6 W D A P T = 25C 46 Power Dissipation D c(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 8 1 Rev. 2.4, 2021-03-19 IRFH5304PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1.0mA BV /T D DSS J R Static Drain-to-Source On-Resistance 3.8 4.5 V = 10V, I = 47A DS(on) GS D m 5.8 6.8 V = 4.5V, I = 47A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 50A GS(th) DS GS D Gate Threshold Voltage Coefficient -6.6 mV/C V GS(th) I Drain-to-Source Leakage Current 5.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20 V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20 V GS gfs Forward Transconductance 88 S V = 15 V, I = 47A DS D Q Total Gate Charge 41 V = 10V, V = 15V, I = 49A g GS DS D Q Total Gate Charge 16 56 V = 15V g DS Q Pre-Vth Gate-to-Source Charge 3.6 I = 47A gs1 D Q Post-Vth Gate-to-Source Charge 2.7 nC V = 4.5V GS gs2 See Fig.17 & 18 Q Gate-to-Drain Charge 5.8 gd Q Gate Charge Overdrive 3.9 godr Q Switch Charge (Q + Q ) 8.5 sw gs2 gd Q Output Charge 9.8 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 13 V = 15V, V = 4.5V d(on) DD GS t Rise Time 25 ns I = 47A r D t Turn-Off Delay Time 12 d(off) R = 1.8 G t Fall Time 6.6 See Fig.15 f C Input Capacitance 2360 V = 0V iss GS pF V = 10V C Output Capacitance 510 oss DS C Reverse Transfer Capacitance 220 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 46 mJ AS I Avalanche Current A AR 47 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 46 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current integral reverse 320 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.71 T = 25C, I =5A, V =0V SD J S GS V Diode Forward Voltage 1.0 V T = 25C, I =47A, V =0V SD J S GS t Reverse Recovery Time 19 29 ns T = 25C, I = 47A, V = 15V rr J F DD Q Reverse Recovery Charge 44 66 nC di/dt = 300A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Mounting Base 2.7 R (Bottom) JC Junction-to-Case 15 C/W R (Top) JC Junction-to-Ambient 35 R JA Junction-to-Ambient 22 R (<10s) JA 2 Rev. 2.4, 2021-03-19