Applications HEXFET Power MOSFET Brushed Motor drive applications V 40V DSS BLDC Motor drive applications R typ. 1.1m DS(on) Battery powered circuits max. 1.4m Half-bridge and full-bridge topologies Synchronous rectifier applications I 259A D (Silicon Limited) Resonant mode power supplies I 100A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA PQFN 5X6 mm Enhanced body diode dV/dt and dI/dt Capability RoHS Compliant containing no Lead, no Bromide, and no Halogen Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IRFH7004PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7004TRPBF 6.0 300 I = 100A D 250 Limited By Package 4.0 200 150 T = 125C J 2.0 100 50 T = 25C J 0.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 259 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 164 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 100 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS Pulsed Drain Current 1247 I DM Maximum Power Dissipation 156 P T = 25C W D C Linear Derating Factor 1.3 W/C Gate-to-Source Voltage 20 V V GS Operating Junction and -55 to + 150 T J C Storage Temperature Range T STG Avalanche Characteristics Single Pulse Avalanche Energy E 191 mJ AS (Thermally limited) Single Pulse Avalanche Energy 479 E AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.8 R (Bottom) 0.5 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient R 34 JA Junction-to-Ambient R (<10s) 21 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.033 V/C Reference to 25C, I = 1.0mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 1.1 1.4 V = 10V, I = 100A DS(on) GS D m 1.7 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.4 G Calculated continuous current based on maximum allowable junction Pulse width 400 s duty cycle 2%. temperature. Package is limited to 100A by production test C eff. (TR) is a fixed capacitance that gives the same charging time oss capability. Note that current limitations arising from heating of the as C while V is rising from 0 to 80% V . oss DS DSS device leads may occur with some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of temperature. FR-4 material. Limited by T , starting T = 25C, L = 0.038mH Jmax J Limited by T , starting T = 25C, L = 1mH, R = 50, I = 31A, R = 50, I = 100A, V =10V. Jmax J G AS GS G AS V =10V. I 100A, di/dt 1366A/s, V V , T 150C. GS SD DD (BR)DSS J