StrongIRFET IRFH7545PbF HEXFET Power MOSFET Application Brushed Motor drive applications V 60V DSS BLDC Motor drive applications Battery powered circuits R typ. 4.3m DS(on) Half-bridge and full-bridge topologies Synchronous rectifier applications max 5.2m Resonant mode power supplies I 85A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant PQFN 5 x 6 mm Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH7545PbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7545TRPbF 20 100 I = 51A D 80 15 60 10 T = 125C J 40 5 20 T = 25C J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 V Gate -to -Source Voltage (V) T , Case Temperature (C) GS, C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFH7545PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 85 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 54 A D C(Bottom) GS I Pulsed Drain Current 340 DM P T = 25C Maximum Power Dissipation 83 W D C Linear Derating Factor 0.67 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Avalanche Characteristics E 102 Single Pulse Avalanche Energy AS (Thermally limited) mJ E Single Pulse Avalanche Energy 160 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R (Bottom) Junction-to-Case 1.5 JC Junction-to-Case C/W R (Top) 22 JC Junction-to-Ambient R 34 JA Junction-to-Ambient R (<10s) 23 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 49 mV/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.3 5.2 V = 10V, I = 51A m DS(on) GS D 6.0 V = 6.0V, I = 26A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V =60 V, V = 0V DSS DS GS 150 V =60V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.5 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 78H, R = 50 , I = 51A, V =10V. Jmax J G AS GS I 51A, di/dt 1212A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 18A, V =10V. Jmax J G AS GS When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: