StrongIRFET IRFH7787PbF HEXFET Power MOSFET Application Brushed motor drive applications V 75V DSS BLDC motor drive applications Battery powered circuits R typ. 6.6m DS(on) Half-bridge and full-bridge topologies Synchronous rectifier applications max 8.0m Resonant mode power supplies I 68A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters Benefits Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant PQFN 5 x 6 mm Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH7787PbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7787TRPbF 18 70 I = 41A D 60 16 50 14 T = 125C J 40 12 30 10 20 T = 25C 8 J 10 6 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFH7787PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 68 D C GS I T = 100C Continuous Drain Current, V 10V 43 A D C GS I Pulsed Drain Current 270 DM P T = 25C Maximum Power Dissipation 83 W D C Linear Derating Factor 0.67 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Avalanche Characteristics E 100 Single Pulse Avalanche Energy AS (Thermally limited) mJ E Single Pulse Avalanche Energy 146 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.5 JC R (Top) Junction-to-Case C/W 21 JC Junction-to-Ambient R 34 JA Junction-to-Ambient R (<10s) 22 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 60 mV/C Reference to 25C, I = 1mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 6.6 8.0 V = 10V, I = 41A DS(on) m GS D 7.5 V = 6.0V, I = 21A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V =75 V, V = 0V DSS DS GS 150 V =75V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.3 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 120H, R = 50 , I = 41A, V =10V. Jmax J G AS GS I 41A, di/dt 1140A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T =25C, L= 1mH, R = 50, I = 17A, V =10V. Jmax J G AS GS 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback February 19, 2015