Applications HEXFET Power MOSFET Synchronous MOSFET for Notebook V R max Qg Processor Power DSS DS(on) Synchronous Rectifer MOSFET for Isolated 3.3m V = 10V 30V 34nC GS DC-DC Converters in Networking Systems Benefits Very low R at 4.5V V DS(ON) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) PQFN Low Thermal Resistance Large Source Lead for more reliable Soldering Standard Pack Orderable part number Package Type Note Form Quantity IRFH7932TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7932TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS T = 25C Continuous Drain Current, V 10V I GS 25 D A Continuous Drain Current, V 10V I T = 70C 20 A GS D A I T = 25C Continuous Drain Current, V 10V GS 104 D C Pulsed Drain Current I 200 DM Power Dissipation P T = 25C 3.4 A D W Power Dissipation P T = 70C 2.2 D A W/C Linear Derating Factor 0.03 T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 2.2 JC C/W Junction-to-Ambient R JA 37 Notes through are on page 10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 2.5 3.3 V = 10V, I = 25A GS D m 3.3 3.9 V = 4.5V, I = 20A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 100A DS GS D V Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 59 S V = 15V, I = 20A DS D Q g Total Gate Charge 34 51 Q gs1 Pre-Vth Gate-to-Source Charge 7.9 V = 15V DS Q Post-Vth Gate-to-Source Charge 3.6 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 11 I = 20A gd D Q Gate Charge Overdrive 12 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) sw gs2 gd 15 Q oss Output Charge 19 nC V = 16V, V = 0V DS GS R Gate Resistance 0.7 G t d(on) Turn-On Delay Time 20 V = 15V, V = 4.5V DD GS t r Rise Time 48 I = 20A D ns t d(off) Turn-Off Delay Time 23 R =1.8 G t Fall Time 20 See Fig.15 f C Input Capacitance 4270 V = 0V iss GS C Output Capacitance 830 V = 15V oss pF DS C rss Reverse Transfer Capacitance 420 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 16 mJ Avalanche Current I AR 20 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 4.2 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 200 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V J S GS t rr Reverse Recovery Time 21 32 ns T = 25C, I = 20A, V = 15V J F DD Q di/dt = 300A/s See Fig.16 rr Reverse Recovery Charge 33 50 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)