HEXFET Power MOSFET Applications V R max Qg DSS DS(on) Control MOSFET of Sync-Buck Converters 30V 3.5m V = 10V 20nC used for Notebook Processor Power GS Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits Very low R at 4.5V V DS(ON) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for R G PQFN 5X6 mm Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering Base part number Package Type Standard Pack Orderable part number Form Quantity IRFH7934PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7934TRPBF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 24 D A I T = 70C Continuous Drain Current, V 10V 19 GS D A A Continuous Drain Current, V 10V I T = 25C 76 C GS D Pulsed Drain Current I 190 DM Power Dissipation P T = 25C 3.1 D A W Power Dissipation P T = 70C 2.0 D A W/C Linear Derating Factor 0.025 T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 2.9 JC C/W Junction-to-Ambient R 40 JA Notes through are on page 10 IRFH7934PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.9 3.5 V = 10V, I = 24A DS(on) GS D m 4.2 5.1 V = 4.5V, I = 19A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 50A DS GS D V Gate Threshold Voltage Coefficient -6.5 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 110 S V = 15V, I = 19A DS D Q Total Gate Charge 20 30 g Q Pre-Vth Gate-to-Source Charge 4.8 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 2.5 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 6.3 I = 19A gd D Q Gate Charge Overdrive 6.4 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 8.8 sw gs2 gd Q Output Charge 15 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 3.1 G t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 16 I = 19A r D ns t Turn-Off Delay Time 14 R =1.8 d(off) G t Fall Time 7.5 See Fig.15 f C Input Capacitance 3100 V = 0V iss GS Output Capacitance 623 pF = 15V C V oss DS C Reverse Transfer Capacitance 241 = 1.0MHz rss Avalanche Characteristics Parameter Units Typ. Max. Single Pulse Avalanche Energy E 97 mJ AS Avalanche Current I 19 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 3.9 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 190 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 19A, V = 0V J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 19A, V = 15V rr J F DD Q Reverse Recovery Charge 28 42 nC di/dt = 325A/ s See Fig.16 rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on