HEXFET Power MOSFET V 30 V DS V V gs max 20 R DS(on) max 2.1 ( V = 10V) m GS ( V = 4.5V) 3.2 GS Q 30 nC g typ. PQFN 5X6 mm I D 80 A ( T = 25C) c(Bottom) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.3C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable part number Note Form Quantity IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8311TRPBF IRFH8311TR2PBF PQFN 5mm x 6mm Tape and Reel 400 IRFH8311TR2PBF EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 32 A D I T = 70C Continuous Drain Current, V 10V 26 GS D A Continuous Drain Current, V 10V 169 I T = 25C C(Bottom) GS D A Continuous Drain Current, V 10V 107 I T = 100C GS D C(Bottom) 10V (Package Limited) 80 I T = 25C Continuous Drain Current, V C GS D Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 96 C(Bottom) D Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 1.70 2.10 V = 10V, I = 20A DS(on) GS D m 2.603.20 V = 4.5V, I = 16A GS D V = V , I = 100A V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.6 mV/C GS(th) A I Drain-to-Source Leakage Current 1 V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 83 S V = 10V, I = 20A DS D Q Total Gate Charge 66 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 30 g Q Pre-Vth Gate-to-Source Charge 9.7 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 3.9 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 8.6 I = 20A gd D Q Gate Charge Overdrive 7.8 godr Q Switch Charge (Q + Q ) 12.5 sw gs2 gd Q Output Charge 21 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.6 G t Turn-On Delay Time 21 V = 15V, V = 4.5V d(on) DD GS t Rise Time 26 I = 20A r D ns t Turn-Off Delay Time 21 R =1.8 d(off) G t Fall Time 12 f 4960 C Input Capacitance V = 0V iss GS 1065 pF C Output Capacitance V = 10V oss DS 455 C Reverse Transfer Capacitance = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 326 mJ AS I Avalanche Current 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 80 (Body Diode) showing the G A I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 22 33 ns T = 25C, I = 20A, V = 15V rr DD J F Q Reverse Recovery Charge 47 71 nC di/dt = 390 A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.3 JC Junction-to-Case R (Top) 30 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 0.99 JA