HEXFET Power MOSFET V 30 V DS V V gs max 20 R DS(on) max 4.1 ( V = 10V) GS m ( V = 4.5V) 6.3 GS Q 14 nC g typ. PQFN 5X6 mm I D 50 A ( T = 25C) c(Bottom) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH8324TRPBF PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 IRFH8324TR2PBF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 23 GS D A Continuous Drain Current, V 10V I T = 70C GS 18 D A Continuous Drain Current, V 10V 90 I T = 25C C(Bottom) GS D A I T = 100C Continuous Drain Current, V 10V 57 GS D C(Bottom) Continuous Drain Current, V 10V (Package Limited) 50 I T = 25C D C GS Pulsed Drain Current I 200 DM Power Dissipation P T = 25C 3.6 A D W Power Dissipation P T = 25C 54 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C Storage Temperature Range T STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 30 V GS D DSS V /T Breakdown Voltage Temp. Coefficient 0.019 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 3.3 4.1 V = 10V, I = 20A DS(on) GS D m 5.0 6.3 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 50 A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.2 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS A DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 72 S V = 10V, I = 20A DS D Q Total Gate Charge 31 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 14 g Q Pre-Vth Gate-to-Source Charge 4.4 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 2.2 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 3.5 I = 20A gd D Q Gate Charge Overdrive 3.9 godr Q Switch Charge (Q + Q ) 5.7 sw gs2 gd Q Output Charge 13 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 13 V = 15V, V = 4.5V d(on) DD GS t Rise Time 26 I = 20A r D ns t Turn-Off Delay Time 14 R =1.8 d(off) G t Fall Time 8.5 f C Input Capacitance V = 0V iss 2380 GS C Output Capacitance pF V = 10V oss 500 DS C Reverse Transfer Capacitance = 1.0MHz rss 205 Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 94 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current D S MOSFET symbol 50 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 200 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 20A, V = 15V rr DD J F Q Reverse Recovery Charge 25 38 nC di/dt = 360 A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 2.3 JC Junction-to-Case R (Top) JC 32 C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 23 JA