HEXFET Power MOSFET V 30 V DS V V gs max 20 R DS(on) max 5.0 ( V = 10V) GS m ( V = 4.5V) GS 7.2 Q 15 nC g typ PQFN 5X6 mm I D 25 A ( T = 25C) c(Bottom) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Note Form Quantity IRFH8325TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8325TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 21 D A GS I T = 70C Continuous Drain Current, V 10V 17 A GS D I T = 25C Continuous Drain Current, V 10V 82 GS D C(Bottom) Continuous Drain Current, V 10V 52 I T = 100C A C(Bottom) GS D Continuous Drain Current, V 10V (Source Bonding GS Technology Limited) I T = 25C 25 C D Pulsed Drain Current I 100 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 54 C(Bottom) D Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 4.1 5.0 V = 10V, I = 20A DS(on) GS D m 6.0 7.2 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 50 A DS GS D V Gate Threshold Voltage Coefficient -6.0 mV/C GS(th) I Drain-to-Source Leakage Current 1 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 74 S V = 10V, I = 20A DS D Q Total Gate Charge 32 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 15 g Q Pre-Vth Gate-to-Source Charge 4.4 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.5 V = 4.5V gs2 GS nC Q gd Gate-to-Drain Charge 4.2 I = 20A D Q godr Gate Charge Overdrive 4.9 Q Switch Charge (Q + Q ) sw gs2 gd 5.7 Q Output Charge 11 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 16 I = 20A r D ns t Turn-Off Delay Time 14 R =1.8 d(off) G t Fall Time 7.1 f C Input Capacitance V = 0V iss 2487 GS C Output Capacitance pF = 10V oss 503 V DS C Reverse Transfer Capacitance = 1.0MHz rss 204 Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 94 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 25 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 100 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 20A, V = 15V rr DD J F Q Reverse Recovery Charge 25 38 nC di/dt = 380A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 2.3 JC Junction-to-Case R (Top) 34 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA