HEXFET Power MOSFET V 30 V DS V V 20 GS max R DS(on) max 9.0 ( V = 10V) GS m ( V = 4.5V) GS 13.5 Q 7.1 nC g typ. PQFN 5X6 mm I D 25 A ( T = 25C) c(Bottom) Applications Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.1C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH8334TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8334TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 14 A GS D I T = 70C Continuous Drain Current, V 10V 12 A GS D I T = 25C Continuous Drain Current, V 10V 44 GS D C(Bottom) Continuous Drain Current, V 10V 28 A I T = 100C C(Bottom) GS D Continuous Drain Current, V 10V (Source Bonding GS 25 I T = 25C C D Technology Limited) Pulsed Drain Current I 100 DM Power Dissipation P T = 25C 3.2 A D W Power Dissipation P T = 25C 30 C(Bottom) D Linear Derating Factor 0.026 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 7.2 9.0 V = 10V, I = 20A DS(on) GS D m 11.2 13.5 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.6 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 44 S V = 10V, I = 20A DS D Q Total Gate Charge 15 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 7.1 g Q Pre-Vth Gate-to-Source Charge 2.5 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.3 I = 20A gd D Q Gate Charge Overdrive 1.3 godr Q Switch Charge (Q + Q ) 3.3 sw gs2 gd Q Output Charge 5.7 nC V = 16V, V = 0V oss DS GS R G Gate Resistance 1.2 t Turn-On Delay Time 8.3 V = 30V, V = 4.5V d(on) DD GS t Rise Time 14 I = 20A r D ns t Turn-Off Delay Time 7.0 R =1.8 d(off) G t Fall Time 4.6 f C Input Capacitance 1180 V = 0V iss GS C Output Capacitance 260 pF V = 10V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 35 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM 100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 13 20 ns T = 25C, I = 20A, V = 15V rr J F DD Q di/dt = 380 A/s Reverse Recovery Charge 19 29 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 4.1 JC Junction-to-Case R (Top) 37 C/W JC Junction-to-Ambient R 39 JA Junction-to-Ambient R (<10s) 26 JA