HEXFET Power MOSFET V -30 V DS 6 mm R DS(on) max 4.6 m ( V = 10V) GS Q 110 g (typical) nC R 2.8 G (typical) I PQFN D -21 A ( T = 25C) 5mm x 6mm A Applications Features and Benefits Resulting Benefits Features Low R ( 4.6m) Lower Conduction Losses DSon results in Industry-Standard PQFN Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRFH9310TRPBF PQFN 5mm x 6mm Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V -10V D A GS -21 I T = 70C Continuous Drain Current, V -10V -17 D A GS I T = 25C Continuous Drain Current, V -10V (Silicon Limited) -107 D C GS A T = 70C Continuous Drain Current, V -10V (Silicon Limited) - 86 I D C GS I T = 25C Continuous Drain Current, V -10V (Package Limited) -40 D C GS I Pulsed Drain Current -170 DM P T = 25C Power Dissipation 3.1 D A W P T = 70C Power Dissipation 2.0 D A Linear Derating Factor 0.025 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 5 mm Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250A BV Drain-to-Source Breakdown Voltage -30 V DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.020 V/C Reference to 25C, I = -1mA DSS J D R 3.7 4.6 V = -10V, I = -21A DS(on) GS D Static Drain-to-Source On-Resistance m V = -4.5V, I = -17A 5.7 7.1 GS D V Gate Threshold Voltage -1.3 -1.9 -2.4 V GS(th) V = V , I = -100A DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GSS GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -17A gfs Forward Transconductance 39 S DS D Q V = -15V,V = -4.5V,I = - 17A Total Gate Charge 58 nC g DS GS D Q V = -10V Total Gate Charge 110 165 GS g Q nC V = -15V Gate-to-Source Charge 17 DS gs I = -17A Q Gate-to-Drain Charge 28 gd D R Gate Resistance 2.8 G V = -15V, V = -4.5V t Turn-On Delay Time 25 d(on) DD GS t I = -1.0A r Rise Time 47 D ns t R = 1.8 Turn-Off Delay Time 65 G d(off) t See Figs. 19a & 19b Fall Time 70 f C V = 0V Input Capacitance 5250 GS iss V = -15V C Output Capacitance 1300 pF DS oss C Reverse Transfer Capacitance 880 = 1.0MHz rss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 170 mJ AS I Avalanche Current -17 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D -3.1 showing the (Body Diode) A G I integral reverse Pulsed Source Current SM -170 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -3.1A, V = 0V SD J S GS t T = 25C, I = -3.1A, V = -24V rr Reverse Recovery Time 42 63 ns J F DD Q Reverse Recovery Charge 42 63 nC di/dt = 100/s rr Thermal Resistance Typ. Max. Parameter Units Junction-to-Case R JC 1.6 Junction-to-Ambient R JA 40 C/W R JA Junction-to-Ambient (t<10s) 35 Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 1.1mH, R = 50, I = -17A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing.