HEXFET Power MOSFET V 30 V DS V V gs max 20 R DS(on) max 14.9 ( V = 10V) GS m ( V = 4.5V) 20.4 GS Q 6.7 nC g typ PQFN Dual 3.3X3.3 mm I D 10 A ( T = 25C) c(Bottom) Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switches Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 6.7C/W) Enable better thermal dissipation Low Profile (<1.0mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFHM8363TRPBF PQFN Dual 3.3mm x 3.3mm Tape and Reel 4000 IRFHM8363TR2PBF PQFN Dual 3.3mm x 3.3mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 11 D A GS Continuous Drain Current, V 10V I T = 70C GS 8.6 D A T = 25C Continuous Drain Current, V 10V 29 I GS D C(Bottom) A Continuous Drain Current, V 10V 18 I T = 100C GS D C(Bottom) Continuous Drain Current, V 10V (Package Limited) 10 I T = 25C GS D C Pulsed Drain Current I 116 DM P T = 25C Power Dissipation 2.7 A D W P T = 25C Power Dissipation 19 D C(Bottom) Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 IRFHM8363PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 12.2 14.9 V = 10V, I = 10A DS(on) GS D m 16.3 20.4 V = 4.5V, I = 8.0A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25A DS GS D V Gate Threshold Voltage Coefficient -6.3 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 20 S V = 10V, I = 10A DS D Q g Total Gate Charge 15 nC V = 10V, V = 15V, I = 10A GS DS D Q g Total Gate Charge 6.7 Q Pre-Vth Gate-to-Source Charge 2.1 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.0 I = 10A gd D Q Gate Charge Overdrive 1.6 godr Q Switch Charge (Q + Q ) 3.0 sw gs2 gd Q Output Charge 7.6 nC V = 24V, V = 0V oss DS GS R G Gate Resistance 1.6 t Turn-On Delay Time 14 = 15V, V = 4.5V d(on) V DD GS t Rise Time 94 = 10A r I D ns t Turn-Off Delay Time 12 R =1.8 d(off) G t Fall Time 33 f C Input Capacitance 1165 V = 0V iss GS C Output Capacitance 260 pF V = 10V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 29 mJ AS Avalanche Current I 10 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 10 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 116 S (Body Diode) p-n junction diode. V T = 25C, I = 10A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t T = 25C, I = 10A, V = 15V Reverse Recovery Time 17 26 ns rr J F DD Q di/dt = 280A/s Reverse Recovery Charge 24 36 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 6.7 JC Junction-to-Case R (Top) 72 C/W JC Junction-to-Ambient R 47 JA Junction-to-Ambient R (<10s) 32 JA