HEXFET Power MOSFET V -30 V DS TOP VIEW V 20 V GS max R DS(on) max S1 1 6D1 170 m ( V = -10V) D1 GS FET1 G1 2 5G2 I D -3.4 A ( T = 25C) C D2 D2 3 4S2 FET2 2mm x 2mm Dual PQFN Applications Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Benefits Low R ( 170m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 19C/W) Enable better thermal dissipation 1.0 mm) results in Increased Power Density Low Profile ( Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFHS9351TRPBF PQFN 2mm x 2mm Tape and Reel 4000 IRFHS9351TR2PBF PQFN 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V -10V -2.3 D A GS I T = 70C Continuous Drain Current, V -10V -1.5 D A GS I T = 25C Continuous Drain Current, V -10V -5.1 D C GS A I T = 70C Continuous Drain Current, V -10V -4.1 D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) -3.4 D C GS Pulsed Drain Current I -20 DM Power Dissipation P T = 25C 1.4 D A W Power Dissipation P T = 70C 0.9 D A Linear Derating Factor 0.01 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250 A BV Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V /T Breakdown Voltage Temp. Coefficient 0.02 V/C D DSS J R V = -10V, I = -3.1A 135 170 GS D DS(on) Static Drain-to-Source On-Resistance m 235 290 V = -4.5V, I = -2.5A GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -10A DS GS D V Gate Threshold Voltage Coefficient -4.6 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DSS DS GS A -150 V = -24V, V = 0V, T = 125C DS GS J I V = -20V Gate-to-Source Forward Leakage -100 GSS GS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -3.1A gfs Forward Transconductance 2.4 S DS D Q Total Gate Charge 1.9 nC V = -15V,V = -4.5V,I = - 3.1A g DS GS D Q Total Gate Charge 3.7 V = -10V GS g V = -15V Q Gate-to-Source Charge 0.6 nC DS gs Q Gate-to-Drain Charge 1.1 I = -3.1A gd D R Gate Resistance 17 G t V = -15V, V = -4.5V Turn-On Delay Time 8.3 d(on) DD GS I = -3.1A t Rise Time 30 D r ns t R = 1.8 d(off) Turn-Off Delay Time 6.3 G t Fall Time 7.9 See Figs. 19a & 19b f C Input Capacitance 160 V = 0V GS iss C pF V = -25V Output Capacitance 39 oss DS C = 1.0KHz Reverse Transfer Capacitance 26 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D -5.1 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM -20 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -3.1A, V = 0V SD J S GS t T = 25C, I = -3.1A, V = -15V Reverse Recovery Time 20 30 ns rr J F DD Q di/dt = 370/s Reverse Recovery Charge 42 63 nC rr Thermal Resistance Typ. Max. Parameter Units Junction-to-Case 19 R (Bottom) JC Junction-to-Case 170 R (Top) JC C/W Junction-to-Ambient 90 R JA Junction-to-Ambient (t<10s) 75 R JA Repetitive rating pulse width limited by max. junction temperature. Current limited by package Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing