IRFI4110GPbF HEXFET Power MOSFET Applications V 100V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 3.7m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits R max. 4.5m DS(on) 72A I D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S D Enhanced body diode dV/dt and dI/dt Capability G Lead-Free TO-220 Full-Pak Halogen-Free G D S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI4110GPbF TO-220 Full-Pak Tube 50 IRFI4110GPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 72 D C GS I T = 100C Continuous Drain Current, V 10V 51 A D C GS I Pulsed Drain Current 290 DM P T = 25C Maximum Power Dissipation 61 W D C Linear Derating Factor W/C 0.41 V Gate-to-Source Voltage V 20 GS dv/dt Peak Diode Recovery dv/dt 27 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Avalanche Characteristics E Single Pulse Avalanche Energy (Thermally Limited) AS 71 mJ I Avalanche Current 43 A AR E Repetitive Avalanche Energy mJ AR 6.1 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 2.46 R JC C/W Junction-to-Ambient (PCB Mount) 65 R JA 1 2017-04-27 IRFI4110GPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 3.7 4.5 m V = 10V, I = 43A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V = 100 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J gfs Forward Trans conductance 260 S V = 50V, I = 43A DS D Q Total Gate Charge 190 290 I = 43A g D Q Gate-to-Source Charge 40 nC V = 50V gs DS V = 10V Q Gate-to-Drain Charge 49 gd GS R Internal Gate Resistance 1.3 G t Turn-On Delay Time 24 V = 65V d(on) DD t Rise Time 58 I = 43A r D ns t Turn-Off Delay Time 81 R = 2.6 d(off) G V = 10V t Fall Time 71 f GS C Input Capacitance 9540 V = 0V iss GS C Output Capacitance 680 V = 50V oss DS C Reverse Transfer Capacitance 300 = 1.0MHz rss pF Effective Output Capacitance (Energy Related) 760 V =0V,V = 0V to 80V C oss eff. (ER) GS DS C Effective Output Capacitance (Time Related) 1120 V = 0V, V = 0V to 80V oss eff. (TR) GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 72 S (Body Diode) showing the A integral reverse Pulsed Source Current I 290 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 43A,V = 0V SD J S GS 50 75 T = 25C J t Reverse Recovery Time ns rr 60 90 T = 125C J V = 85V R 100 150 T = 25C J I = 43A Q Reverse Recovery Charge nC F rr 140 210 T = 125C J di/dt= 100A/s I Reverse Recovery Current 3.5 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T , starting T = 25C, L = 0.077mH, R = 50 , I = 43A, V =10V. Part not recommended for use above this value. Jmax J G AS GS I 43A, di/dt 1600A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff. oss DS DSS C (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff. oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. R is measured at T approximately 90C. J 2 2017-04-27